Effect of Si+ Ion Implantation in α-Ga2O3 Films on Their Gas Sensitivity

被引：6

作者：

Yakovlev, Nikita ^{[1
,2
]}

Almaev, Aleksei ^{[1
,2
]}

Butenko, Pavel ^{[3
,4
]}

Tetelbaum, David ^{[5
]}

Mikhaylov, Alexey ^{[5
]}

Nikolskaya, Alena ^{[5
]}

Pechnikov, Aleksei ^{[3
,4
]}

Stepanov, Sergey ^{[3
,4
]}

Boiko, Mikhail ^{[3
,4
]}

Chikiryaka, Andrei ^{[3
,4
]}

Nikolaev, Vladimir ^{[3
,4
]}

机构：

[1] Fokon LLC, Kaluga 248035, Russia

[2] Natl Res Tomsk State Univ, Res & Dev Ctr Adv Technol Microelect, Tomsk 634050, Russia

[3] Perfect Crystals LLC, St Petersburg 194064, Russia

[4] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[5] Lobachevsky Univ, Res Inst Phys & Technol, Nizhnii Novgorod 603022, Russia

来源：

IEEE SENSORS JOURNAL | 2023年 / 23卷 / 03期

基金：

俄罗斯基础研究基金会; 俄罗斯科学基金会;

关键词：

alpha-Ga2O3; gas sensitivity; halide vapor phase epitaxy (HVPE); ion implantation; TUNGSTEN-OXIDE FILMS; THIN-FILM; SNO2; SENSORS; CONDUCTIVITY; NANOWIRES; BEHAVIOR;

D O I：

10.1109/JSEN.2022.3229707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) alpha-Ga2O3 films grownby halide vapor phaseepitaxy (HVPE) hasbeen studied. It is established that irradiation with a dose of 8 x 10(12) - 8 x 10(15) cm(-2) at an energy of 100 keV followed by postimplantation annealing increases the response of alpha-Ga2O3 films to 3 vol% of H-2 by 43 times at 400 degrees C, reduces the response time by a factor of 6, and expands the operating temperature range down to 30 degrees C. In addition, alpha-Ga2O3 layers irradiated with a Si+ ion dose of 8 x 10(13) - 8 x 10(15) cm(-2) demonstrate high sensitivity to CO and NH3 gases. The mechanism of Si+ ion irradiationeffecton the gas-sensingpropertiesof alpha-Ga2O3 structures is proposed.

引用

页码：1885 / 1895

页数：11

共 52 条

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