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Photoluminescence and scintillation properties of Pr-doped (Lu, Y)2Si2O7 crystals
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Kawaguchi, Noriaki
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Nara Inst Sci & Technol NAIST, Div Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan Nara Inst Sci & Technol NAIST, Div Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan

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[1] Nara Inst Sci & Technol NAIST, Div Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan
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日本学术振兴会;
关键词:
radiation measurement;
scintillator;
luminescence;
5d-4f transitions;
RADIATION HARDNESS;
EFFICIENCY;
SYSTEMS;
D O I:
10.35848/1347-4065/acefdb
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O59 [应用物理学];
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摘要:
Pr-doped (Lu1-x, Y-x)(2)Si2O7 (x = 0.25, 0.5, and 0.75) crystals were synthesized by the floating zone method. Emission peaks due to 5d-4f transitions of Pr3+ were observed at 300 nm under excitation of both UV light and X-rays. Scintillation decay times of 19-22 ns were obtained, and they originated from the 5d-4f transitions of Pr3+. Afterglow levels became high from 64.7 to 541 ppm as the Y-admixed concentration increased. The light yields were estimated to be 560-700 photons MeV-1 by comparing the channels of photoabsorption peaks from the pulse height spectra of Cs-137 gamma-rays measured using prepared crystals and commercial Gd2SiO5 reference. (c) 2023 The Japan Society of Applied Physics
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