Properties of ultrathin epitaxial NbNx film on C-cut sapphire

被引：0

作者：

Shibalov, M., V ^{[1
]}

Sirotina, A. P. ^{[1
]}

Pershina, E. P. ^{[1
]}

Shibalova, A. A. ^{[1
]}

Mumlyakov, A. M. ^{[1
]}

Porokhov, N. V. ^{[1
]}

Tarkhov, A. M. ^{[1
]}

机构：

[1] RAS, Inst Nanotechnol Microelect, Moscow, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 03期

关键词：

atomic layer deposition; niobium nitride; epitaxy; superconductivity; critical current density;

D O I：

10.18721/JPM.163.112

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

maxshibalov@gmail.com Abstract. Here we report on the results of obtaining and study of epitaxial ultrathin super-conductive films of niobium nitride grown on a C-plane sapphire substrate. The films were de-posited from metal-organic precursor using the plasma-enhanced atomic layer deposition. We employed X-ray diffraction, and high-resolution transmission electron microscopy techniques to study the structural properties of the films. We also determined the quasiparticle diffusion constant, the coherence length, the superconducting transition temperature, the critical current density, and the non-uniformity of the resistance distribution of niobium nitride films.

引用

页码：69 / 73

页数：5

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