Strain-tunable quantum anomalous Hall effect/quantum anomalous valley Hall effect in two-dimensional ferromagnetic non-Dirac topological half-metal N2Pd4S6

被引:8
|
作者
Yang, Xin [1 ]
Shen, Yanqing [1 ,2 ]
Liu, Jiajia [1 ]
Lv, Lingling [1 ]
Zhou, Min [1 ]
Zhang, Yu [1 ]
Meng, Xianghui [1 ]
Zhou, Zhongxiang [1 ,2 ]
Zheng, Yangdong [1 ]
机构
[1] Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China
[2] Harbin Inst Technol, Heilongjiang Prov Key Lab Plasma Phys & Applicat T, Harbin 150001, Peoples R China
基金
国家重点研发计划; 中国博士后科学基金; 中国国家自然科学基金;
关键词
CHERN INSULATORS; HIGH-TEMPERATURE; STATES;
D O I
10.1063/5.0147538
中图分类号
O59 [应用物理学];
学科分类号
摘要
Systems with both the quantum anomalous Hall (QAH) effect and the quantum anomalous valley Hall (QAVH) effect have wide appeal in fundamental research and practical quantum device applications. By using first-principles calculations, the topologically nontrivial phase and QAH effect were predicted in the ferromagnetic non-Dirac half-metal N2Pd4S6 monolayer. The N2Pd4S6 monolayer prefers out-of-plane magnetization and exhibits a Curie temperature of similar to 80 K due to dual double-exchange interaction. Upon application of - 1% strain, the Curie temperature can reach up to similar to 117 K. Furthermore, the N2Pd4S6 monolayer exhibits a non-Dirac band dispersion near the Fermi level. The introduction of magnetic exchange and spin-orbit coupling (SOC) together enables to realize topologically nontrivial phase and QAH state. Remarkably, the compressive strain induces spontaneous valley polarization at the non-high symmetry point, thereby enabling the unique QAVH effect. Reversible switching between the QAH and QAVH effect can be achieved in the N2Pd4S6 monolayer by applying of compression strain.
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页数:6
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