Longitudinal stacking of ion beams with pulsed electron beam cooling

Longitudinal ion beam stacking with the combination of barrier rf system and beam cooling has been demonstrated in several experiments. Based on the bunching effect found in the pulsed electron beam cooling experiment at HIRFL-CSRm, we propose a new beam stacking scheme using only pulsed electron beam, in which the barrier voltage and cooling effect can be realized simultaneously. In this paper, we introduce this longitudinal stacking scheme along with the theory of beam dynamics and present a simple analytical model. The simulation demonstrates that this approach could be a useful beam stacking technique without the need for barrier bucket hardware. Moreover, the optimization and limitation of this stacking scheme are discussed, and the effect of the electron beam distribution on the barrier voltage is studied. We expect this stacking method can be applied to accumulate RIBs in low and medium energy storage rings for high-precision experiments, such as the SRing of the HIAF project.