Effects of lattice strain on hydrogen diffusion, trapping and escape in bcc iron from ab-initio calculations

被引:11
作者
Luo, Fengping [1 ]
Liu, Qingyuan [1 ]
Huang, Jia [1 ]
Xiao, Hao [1 ]
Gao, Zhiying [1 ]
Ge, Wei [1 ]
Gao, Fei [2 ]
Wang, Yugang [1 ]
Wang, Chenxu [1 ]
机构
[1] Peking Univ, Ctr Appl Phys & Technol, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China
[2] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA
基金
中国国家自然科学基金;
关键词
Lattice strain; Hydrogen diffusion; Defect trapping; Hydrogen escape; Ab-initio calculations; Statistical mechanics; 1ST-PRINCIPLES CALCULATIONS; VACANCY FORMATION; GRAIN-BOUNDARY; ENERGY; TEMPERATURE; TUNGSTEN; STRESS; BEHAVIOR; EMBRITTLEMENT; DISSOLUTION;
D O I
10.1016/j.ijhydene.2022.11.206
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Lattice strain potentially alters hydrogen (H) behaviors in structural materials and thus H -induced damages. Herein, we computationally investigate effects of lattice strain on H diffusion in the bulk region, and trapping by vacancy defects and escape in body-centered cubic (bcc) iron (Fe) using ab-initio calculations and statistical mechanics. The anisotropy of strain effect on H diffusion in bcc Fe is found in contrast with fcc systems, which essen-tially determines the alteration of H diffusion coefficient. The hydrostatic tensile strain attenuates H trapping, while the hydrostatic compressive strain inhibits H escape. The strong anisotropy of strain effect on H escape is confirmed, leading to low-barrier escape channels for H under the given anisotropic strain and facilitating H escape. This strong anisotropy is also reflected in the hopping of solute atoms He, C and O within {100} crystal planes. Strain effects on H trapping and escape become progressively more evident with decreasing temperature as shown by the escape rate. The obtained strain effects are in accordance with previous experimental observations on H in iron and steels under loading. Furthermore, the low-barrier channels of H escape from vacancy defects under strain are found to be the pathways where the density of electron gas is lower and the H-induced lattice distortion is weaker. The above results indicate a possibility of strain-promoted H -induced degradation of materials: strain-accelerated H transport from defects with low trapping depths for H to those with high trapping depths for H. This work also provides significant insights towards better understanding of H-isotope retention under strain in fusion reactors.(c) 2022 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:8198 / 8215
页数:18
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