Evaluation of the Electronic Properties of Atomic Layer Deposition-Grown Ge-Doped Zinc Oxide Thin Films at Elevated Temperatures

被引：2

作者：

Knura, Rafal ^{[1
]}

Skibinska, Katarzyna ^{[1
]}

Sahayaraj, Sylvester ^{[1
]}

Marciszko-Wiackowska, Marianna ^{[2
]}

Gwizdak, Jakub ^{[3
]}

Wojnicki, Marek ^{[1
,3
]}

Zabinski, Piotr ^{[3
]}

Sapeta, Grzegorz ^{[1
]}

Iwanek, Sylwester ^{[1
]}

Socha, Robert P. ^{[1
]}

机构：

[1] CBRTP SA Res & Dev Ctr Technol Ind, Ludwika Warynskiego 3A, PL-00645 Warsaw, Poland

[2] AGH Univ Krakow, Acad Ctr Mat & Nanotechnol, Al Mickiewicza 30, PL-30059 Krakow, Poland

[3] AGH Univ Krakow, Fac Nonferrous Met, Al Mickiewicza 30, PL-30059 Krakow, Poland

来源：

ELECTRONICS | 2024年 / 13卷 / 03期

关键词：

thin films; atomic layer deposition; Hall effect; ZnO doped by Ge; ZnO; Ge-doped zinc oxide; electronic properties;

D O I：

10.3390/electronics13030554

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The aim of this study was to determine the electronic properties of as-deposited ALD-grown Ge-doped zinc oxide thin films annealed at 523 K or 673 K. SEM, EDS, and ellipsometry measurements confirmed that the Ge-doped zinc oxide films with a thickness of around 100 nm and uniform composition were successfully obtained. GI-XRD measurements did not reveal phases other than the expected Wurtzite structure of the ZnO. The electronic properties, i.e., conductivity, charge carrier concentration, and mobility of the films, were evaluated using Hall effect measurements and explained based on corresponding XPS measurements. This work supports the theory that oxygen vacancies act as electron donors and contribute to the intrinsic n-type conductivity of ZnO. Also, it is shown that the effect of oxygen vacancies on the electronic properties of the material is stronger than the effect introduced by Ge doping.

引用

页数：14

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