S-parameter extraction for electromagnetic modelling of memristor-based crossbar array circuits

被引:0
|
作者
Yu, Junwei [1 ]
Ma, Hanzhi [1 ]
Tao, Tuomin [1 ]
Zhang, Ling [1 ]
Li, Da [1 ]
Li, Er-Ping [1 ]
机构
[1] Zhejiang Univ, ZJU UIUC Inst, Coll Informat Sci & Elect Engn, Hangzhou, Peoples R China
基金
中国国家自然科学基金;
关键词
electromagnetic compatibility; memristor circuits; CHIP;
D O I
10.1049/ell2.13089
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents an efficient S-parameter extraction method for memristor-based crossbar array circuits. The proposed approach involves converting the array into an equivalent circuit and analytically solving the circuit to obtain the S-parameters. Memristor-based crossbar array circuit simulations and corresponding experimental measurements are conducted to verify the high accuracy and low computation complexity of the established method. These numerical results indicate that the authors' S-parameter extraction method has the potential for evaluating signal integrity performance in neuromorphic chips, thus aiding their design and optimization for diverse applications. This article presents an efficient S-parameter extraction method for memristor-based crossbar array circuits. Memristor-based crossbar array circuit simulations and corresponding experimental measurements are conducted to verify the high accuracy and low computation complexity of the established method. These numerical results indicate that the authors' S-parameter extraction method has the potential for evaluating signal integrity performance in neuromorphic chips, thus aiding their design and optimization for diverse applications. image
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页数:3
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