In photovoltaic (PV) technology, halide perovskites are the prospective choice for highly efficient solar absorbers because of their superior optical properties, enhanced efficiency, lightweight, and low cost. In this study, a double absorber solar device using an inorganic perovskite called NaZn0.7Cu0.3Br3 as the top absorber layer and MASnI3 as the bottom absorber layer is analyzed utilizing the SCAPS-1D simulation tool. The primary goal of this study is to look for a device architecture with a higher efficiency level. Here, current matching over two active layers is performed by adjusting the thickness of both active layers. This research focuses on the effect of various electron transport layers, varied absorber layer thicknesses, temperatures, absorber defect density, and metalwork functions on the performance of the proposed photo-voltaic cells. After researching a variety of solar cell architectures, it is revealed that FTO/ZnO/ NaZn0.7Cu0.3Br3 / MASnI3 / CuO /Au arrangement has an open circuit voltage of 1.1373 V, Fill Factor of 82.13%, short circuit current density of 34.71 mA/cm2 and highest power conversion efficiency (PCE) of 32.42%. Here, the simulations of the device indicated that a thickness of around 1 & mu;m for the MASnI3 absorber was optimum. Additionally, the results of the simulations demonstrate that the efficiency of the device rapidly drops with increasing absorbers defect density and temperature, and device structures are steady at 300 K. Finally; any conductor can make the anode if its work function is larger than or equal to 5.10 eV.
