Noble-Metal-Free, Polarity-Switchable IGZO Schottky Barrier Diodes

被引：1

作者：

Li, Yuzhi ^{[1
]}

Zhou, Yue ^{[1
]}

Guo, Chan ^{[1
]}

Zou, Shenghan ^{[1
]}

Lan, Linfeng ^{[2
]}

Gong, Zheng ^{[1
]}

机构：

[1] Guangdong Acad Sci, Inst Semicond, Guangzhou 510650, Peoples R China

[2] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Indium-gallium-zinc oxide (IGZO); metal oxide (MO); Schottky barrier diode (SBD); switchable polarity; OXIDE; TEMPERATURE; CAPACITANCE;

D O I：

10.1109/TED.2023.3267755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, noble-metal-free, polarityswitchable indium-gallium-zinc oxide (IGZO) Schottky barrier diodes (SBDs) with a vertically stacked structure of copper (Cu)/AlOx/IGZO/indium-tin oxide (ITO) were demonstrated for the first time. The polarity of the SBDs can be manipulated through a simple postannealing process in N-2. Without annealing, the as-fabricated IGZO SBD works in a negative operation mode (i.e., the dominating current flow direction is from the bottom ITO electrode to the top Cu electrode). The optimized SBD working in the negative mode exhibits excellent electrical properties with a rectification ratio of 2.12 x 10(6), a Schottky barrier height of 0.87 eV, and an ideality factor of 1.26. After annealing in N-2, the IGZO SBD switches to a positive operation mode. Through optimization, the positive SBD exhibits a rectification ratio of 4.24 x 10(5), a Schottky barrier height of 0.83 eV, and an ideality factor of 1.43. The mechanism of polarity inversion behavior for the IGZO SBDs was discussed in detail by taking the Cu diffusion and contact modification via the AlOx inserting layer into account. This work sheds light on the development of noble-metal-free metal oxide (MO) SBDs with controllable polarities and the future integration of MO SBDs with other electron devices.

引用

页码：3057 / 3063

页数：7