Recent Progress of Polymeric Dielectrics in Molybdenum Disulfide-Based Devices

被引:4
作者
Ding, Mingyi [1 ,2 ]
Ji, Deyang [1 ,2 ]
Hu, Wenping [3 ,4 ]
机构
[1] Tianjin Univ, Inst Mol Aggregat Sci, Dept Chem, Tianjin Key Lab Mol Optoelect Sci,Minist Educ,Key, Tianjin 300072, Peoples R China
[2] Tianjin Univ, Collaborat Innovat Ctr Chem Sci & Engn, Tianjin 300072, Peoples R China
[3] Tianjin Univ, Collaborat Innovat Ctr Chem Sci & Engn, Key Lab Organ Integrated Circuit, Minist Educ, Tianjin 300072, Peoples R China
[4] Tianjin Univ, Sch Sci, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
molybdenum disulfide; polymer dielectrics; interface engineering; device fabrication; functionalapplication; MULTILAYER MOS2 TRANSISTORS; MONOLAYER MOS2; BROAD-BAND; LAYER; PHOTOTRANSISTORS; OPTOELECTRONICS; PHOTODETECTOR; FILMS;
D O I
10.1021/acsaelm.3c01792
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Molybdenum disulfide (MoS2) presents promising channel active materials in the next generation of high-performance electronic devices due to its excellent photoelectric properties, good gate-controlled capability, and mechanical flexibility. Compared with inorganic dielectrics, MoS2 on polymeric dielectrics shows more possibility in lightweight, portable, and wearable applications due to the necessary feature of low flexural stiffness for flexible electronic devices. Some progress in MoS2/polymeric dielectric-based electronic devices has been made, but there are still many key challenges and opportunities. In this review, we summarize the recent MoS2/polymeric dielectrics-based electronic devices on rigid and flexible substrates; meanwhile, interface engineering inspired from inorganic interfaces is also briefly discussed. Finally, functional MoS2/polymeric dielectrics-based electronic devices are provided, and the challenges for MoS2/polymeric dielectrics-based electronic devices are presented.
引用
收藏
页码:8655 / 8670
页数:16
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