GPGPU MCII for high-energy implantation

被引：0

作者：

Machida, Fumie ^{[1
]}

Koshimoto, Hiroo ^{[1
]}

Kayama, Yasuyuki ^{[1
]}

Schmidt, Alexander ^{[2
]}

Jang, Inkook ^{[2
]}

Yamada, Satoru ^{[1
]}

Kim, Dae Sin ^{[2
]}

机构：

[1] Samsung R&D Inst Japan SRJ, DS Ctr, DS2 Lab, Tsurumi Ku, Yokohama 2300027, Japan

[2] Samsung Elect Co Ltd, Innovat Ctr, CSE Team, Hwasung Si 18448, Gyeonggi Do, South Korea

来源：

SOLID-STATE ELECTRONICS | 2023年 / 199卷

关键词：

GPGPU acceleration; Ion Implantation; Monte Carlo Simulation;

D O I：

10.1016/j.sse.2022.108520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we develop a GPGPU acceleration methodology for the Binary-Collision-Approximation based Monte Carlo ion implantation simulation (MCII). Our proposed method avoids the branch-divergence issue which comes from the difference of material crystallinity for the structure with multiple materials. We also introduce an efficient scheme to mitigate the side effect for damage accumulation due to massive parallelization of simulation. Our demonstration of high energy implantation into CIS structure shows almost 40x speed-up compared to CPU implementation of MCII. We conclude that GPU-MCII is effective for acceleration of Monte Carlo simulations with high energy implantation e.g. deep photodiode or well isolation formation.

引用

页数：4

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