Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs

被引：0

作者：

Ishida, Takashi ^{[1
]}

Ushijima, Takashi ^{[1
]}

Nakabayashi, Shosuke ^{[1
]}

Kato, Kozo ^{[1
]}

Koyama, Takayuki ^{[1
]}

Nagasato, Yoshitaka ^{[1
,2
]}

Ohara, Junji ^{[1
]}

Hoshi, Shinichi ^{[1
]}

Nagaya, Masatake ^{[1
]}

Hara, Kazukuni ^{[1
]}

Kanemura, Takashi ^{[1
]}

Taki, Masato ^{[1
]}

Yui, Toshiki ^{[3
]}

Hara, Keisuke ^{[3
]}

Kawaguchi, Daisuke ^{[3
]}

Kuno, Koji ^{[3
]}

Osajima, Tetsuya ^{[3
]}

Kojima, Jun ^{[1
,2
]}

Uesugi, Tsutomu ^{[2
]}

Tanaka, Atsushi ^{[2
]}

Sasaoka, Chiaki ^{[2
]}

Onda, Shoichi ^{[1
,2
]}

Suda, Jun ^{[2
]}

机构：

[1] MIRISE Technol, Toyota, Aichi 4700309, Japan

[2] Nagoya Univ, Nagoya, Aichi 4648601, Japan

[3] Hamamatsu Photon KK, Iwata, Shizuoka 4380193, Japan

来源：

APPLIED PHYSICS EXPRESS | 2024年 / 17卷 / 02期

关键词：

GaN substrate; recycling process; laser slicing; cost reduction; power device; TRANSISTORS;

D O I：

10.35848/1882-0786/ad269d

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To address the issue of the high cost of GaN substrates, a recycling process for GaN substrates using a laser slicing technique was investigated. The channel properties of lateral MOSFETs and the reverse characteristics of vertical PN diodes, which represent the main components of vertical power devices, exhibited no degradation either before and after laser slicing or due to the overall GaN substrate recycling process. This result indicates that the proposed recycling process is an effective method for reducing the cost of GaN substrates and has the potential to encourage the popularization of GaN vertical power devices.

引用

页数：5

共 39 条

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