Occurrence of robust memristive behavior for low-power transient resistive switching and photo-responsive neuromorphic computing in low-dimensional perovskite

Recent progress on the memristive devices owing to the multi-functional approach have surged the exploration of new functional materials. Here, we have incorporated two-dimensional (2D) halide perovskite in memristive device. The Pb-free Cs3Bi2I9 perovskite active layer was fabricated to obtain the ITO/Cs3Bi2I9/Pt structure. The device shows typical bipolar resistance switching behavior with Off state resistance in T Omega scale. Due to the higher work function of the top Pt electrode, the barrier height at the Pt/Cs3Bi2I9 junction is higher and the observed device conductance is low in the Off state. Enhanced memory parameters such as endurance (>10(3) cycles) and retention (10(4) s) for multiple conductance states is observed. In the pulse modulated synaptic characterization, the device emulated essential post-synaptic plasticity, short-term and long-term potentiation with power consumption in femto Joule. The classical conditioning learning was mimicked by the device by electric and optical stimulation procuring basic associative training. The non-toxicity of the perovskite material has been successfully utilized for the transient memristor application. The robust in-memory photonic memristive property of the device along with water stimulated transient behavior demonstrates the significance of the proposed device in multi-dimensional field of electronic device.