Optical absorption enhancement in inhomogeneous InGaN nanowire arrays photocathode

被引:2
|
作者
Cao, Zhihao [1 ]
Liu, Lei [1 ]
Lu, Feifei [1 ]
Cheng, Hongchang [2 ]
Guo, Xin [2 ]
机构
[1] Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Dept Optoelect Technol, Nanjing 210094, Peoples R China
[2] Sci & Technol Low Light Level Night Vis Lab, Xian 710065, Peoples R China
基金
中国国家自然科学基金;
关键词
trapping effect; InGaN; FDTD; inhomogeneous NWAS; optical absorption; EFFICIENCY;
D O I
10.1088/1361-6528/acf474
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the development of surface structures, nanowire arrays (NWAS) have been widely studied because of their trapping effect. In this paper, the finite difference time domain (FDTD) method is used to simulate homogeneous and inhomogeneous NWAS. We studied the influence of the structural parameters of InGaN NWAS and inhomogeneous arrays on optical response properties. The optical response includes light absorptivity and cutoff wavelength sensitivity. The simulation results show that the inhomogeneous NWAS can increase the effective transmission distance of light on the surface, thus greatly improving the optical absorption capacity of InGaN NWAS. We can obtain high sensitivity of cut-off wavelength by adjusting the structural parameters of the side nanowires. We find that by reducing the diameters and heights of the side nanowires, a higher light absorption rate can be obtained, which is a 5% improvement compared to uniform NWAS. Therefore, the research in this paper can provide some theoretical reference for the experiment and preparation of InGaN photocathodes.
引用
收藏
页数:8
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