A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology

被引：6

作者：

Piro, F. ^{[1
,2
]}

Rinella, G. Aglieri ^{[1
]}

Andronic, A. ^{[3
]}

Antonelli, M. ^{[4
]}

Aresti, M. ^{[5
,6
]}

Baccomi, R. ^{[4
]}

Becht, P. ^{[7
]}

Beole, S. ^{[8
,9
]}

Braach, J. ^{[1
]}

Buckland, M. D. ^{[4
,10
]}

Buschmann, E. ^{[1
]}

Camerini, P. ^{[4
,10
]}

Carnesecchi, F. ^{[1
]}

Cecconi, L. ^{[1
]}

Charbon, E. ^{[2
]}

Contin, G. ^{[4
,10
]}

Dannheim, D. ^{[1
]}

de Melo, J. ^{[1
]}

Deng, W. ^{[1
,11
]}

di Mauro, A. ^{[1
]}

Vassilev, M. Dimitrova ^{[12
]}

Emiliani, S. ^{[1
]}

Hasenbichler, J. ^{[1
,13
]}

Hillemanns, H. ^{[1
]}

Hong, G. H. ^{[1
]}

Isakov, A. ^{[14
]}

Junique, A. ^{[1
]}

Kluge, A. ^{[1
]}

Kotliarov, A. ^{[14
]}

Krizek, F. ^{[14
]}

Kugathasan, T. ^{[1
,15
]}

Lautner, L. ^{[1
]}

Lemoine, C. ^{[1
]}

Mager, M. ^{[1
]}

Marras, D. ^{[5
,6
]}

Martinengo, P. ^{[1
]}

Masciocchi, S. ^{[7
]}

Menzel, M. W. ^{[7
]}

Munker, M. ^{[1
,17
]}

Rachevski, A. ^{[4
]}

Rebane, K. ^{[1
]}

Reidt, F. ^{[1
]}

Russo, R. ^{[16
]}

Sanna, I. ^{[1
]}

Sarritzu, V. ^{[5
,6
]}

Senyukov, S. ^{[18
]}

Snoeys, W. ^{[1
]}

Sonneveld, J. ^{[16
]}

Suljic, M. ^{[1
]}

Svihra, P. ^{[1
]}

机构：

[1] CERN, Dept Expt Phys, CH-1211 Geneva, Switzerland

[2] Ecole Polytech Fed Lausanne, Adv Quantum Architecture Lab AQUA, CH-1015 Lausanne, Switzerland

[3] Univ Munster, Inst Kernphys, D-48149 Munster, Germany

[4] INFN Sez Trieste, I-34127 Trieste, Italy

[5] Univ Cagliari, Dept Phys, I-09124 Cagliari, Italy

[6] INFN Sez Cagliari, I-09042 Cagliari, Italy

[7] Heidelberg Univ, Phys Inst, D-69120 Heidelberg, Germany

[8] Univ Torino, Dept Phys, I-10124 Turin, Italy

[9] INFN Sez Torino, I-10125 Turin, Italy

[10] Univ Trieste, Dept Phys, I-34127 Trieste, Italy

[11] OmniVis Technol, N-0349 Oslo, Norway

[12] Stanford Univ, Phys Dept, Stanford, CA 94305 USA

[13] Epitome GmbH, A-1100 Vienna, Austria

[14] Czech Acad Sci, Nucl Phys Inst, Rez 25068, Czech Republic

[15] Univ Geneva, Dept Nucl & Particle Phys, CH-1205 Geneva, Switzerland

[16] Nikhef Natl Inst Subatom Phys, NL-1098 XG Amsterdam, Netherlands

[17] Infineon Technol, D-85579 Neubiberg, Germany

[18] Ctr Natl Rech Sci CNRS, F-67037 Strasbourg, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2023年 / 70卷 / 09期

关键词：

Front-end circuits; low-power circuits; monolithic active pixel sensors (MAPSs); PIXEL DETECTORS;

D O I：

10.1109/TNS.2023.3299333

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (<2 fF) collection electrode and is integrated into the DPTS chip, a proof-of-principle prototype of 1.5 x 1.5 mm including a matrix of 32 x 32 pixels with a pitch of 15 mu m. The chip is implemented in the 65-nm imaging technology from the Tower Partners Semiconductor Company foundry and was developed in the framework of the EP-Research and Development Program at CERN to explore this technology for particle detection. The front-end circuit has an area of 42 mu m(2) and can operate with power consumption as low as 12 nW. Measurements on the prototype relevant to the front end will be shown to support its design.

引用

页码：2191 / 2200

页数：10

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