The epitaxial iron-yttrium garnet films with homogeneous properties and narrow FMR line width

The growth of iron-yttrium garnet Y3Fe5O12 (YIG) films with of 1...15 & mu;m thicknesses on single-crystal substrates of gallium-gadolinium garnet Gd3Ga5O12 (GGG) was carried out using the method of liquid phase epitaxy (LPE). The influence of the composition and mass of the charge, the temperature regimes, the rates of movement and the substrate rotation on the films parameters were studied. The layered structure caused by the heterogeneity of the chemical composition in the film thickness was determined and studied. The dependence of the degree impurity of Pb2+ and Pt4+ ions in YIG films and their influence on the ferromagnetic resonance (FMR) line width increment H on the films growth conditions was investigated. It's shown that in order to obtain by the LPE method the series of defect-free films with low magnetic losses and reproducible parameters, it's necessary to use meltsolutions of large mass (6...12 kg) and apply their additional mixing during the growth process.