Enhanced optical contrast of Ag-doped Ge-Sb-Se-Te phase change films

被引：1

作者：

Wang, Rui ^{[1
]}

Ji, Congzheng ^{[1
]}

Lu, Liangjun ^{[2
,3
]}

Zhou, Linjie ^{[2
,3
,4
]}

Zheng, Fengang ^{[1
]}

机构：

[1] Soochow Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Thin Films, Suzhou 215006, Peoples R China

[2] SJTU Pinghu Inst Intelligent Optoelect, Pinghu 314200, Peoples R China

[3] Shanghai Jiao Tong Univ, Dept Elect Engn, Shanghai 200240, Peoples R China

[4] Shanghai Jiao Tong Univ, Shanghai Inst Adv Commun & Data Sci, Dept Elect Engn, Shanghai 200240, Peoples R China

来源：

MATERIALS LETTERS | 2023年 / 349卷

基金：

中国国家自然科学基金;

关键词：

Optical materials and properties; Phase transformation; Raman; XPS; Thin films;

D O I：

10.1016/j.matlet.2023.134736

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phase change material (PCM) Ge2Sb2Se4Te1 film doped by Ag (AGSST) was prepared by the pulsed laser deposition (PLD) method. The crystal structure, chemical bonding and film complex refractive index were investigated. The AGSST undergoes a phase transition through annealing. The extinction coefficient of crystalline (CR) AGSST has been significantly lowered for the communication C-band at 1550 nm, with a figure of merit (FOM) of 7.48, surpassing that of undoped GSST. This outcome delivers chalcogenide PCMs that are potentially in the development of programmable nonvolatile photonics.

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