Zr-doped indium oxide films for silicon heterojunction solar cells

被引：7

作者：

Huang, Xiaohan ^{[1
,2
]}

Zhou, Yurong ^{[1
]}

Guo, Wanwu ^{[3
]}

Liu, Fengzhen ^{[1
]}

Zhao, Dongming ^{[4
]}

Life, Rui ^{[5
]}

Huang, Haiwei ^{[5
]}

Hao, Zhidan ^{[5
]}

Zhou, Yuqin ^{[1
]}

机构：

[1] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[2] Binzhou Inst Technol, Shandong, Peoples R China

[3] Jet Solar China Co Ltd, Jiangsu, Jiangsu, Peoples R China

[4] Huaneng Clean Energy Res Inst, Wuhan, Peoples R China

[5] Huaneng Gansu Engery Dev Co Ltd, Wuhan, Peoples R China

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2023年 / 260卷

基金：

国家自然科学基金重大项目;

关键词：

Silicon heterojunction solar cell; Zirconium-doped indium oxide; Mobility; Annealing treatment; Hydrogen doping; IN2O3; THIN-FILMS; OPTICAL-PROPERTIES; MOBILITY; PLASMA; TEMPERATURE; EFFICIENCY; HYDROGEN;

D O I：

10.1016/j.solmat.2023.112480

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Zirconium (Zr)-doped indium oxide (IZrO) films were prepared by reactive plasma deposition (RPD). The best IZrO film has high mobility of 151.8 cm(2)/V.s and low carrier concentration of 1.7 x 10(20)/cm(3) owing to annealing treatment and hydrogen doping. IZrO film was used as a transparent conducting electrode in silicon heterojunction (SHJ) solar cells. The SHJ cell (274.15 cm(2)) has a conversion efficiency of 24.55%, open-circuit voltage of 747.47 mV, short circuit current density of 39.98 mA/cm(2), and filling factor of 82.18%.

引用

页数：7

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