Characterization of Oxide Interface Charges in Trench Field Stop IGBT

被引：2

作者：

Sim, Zhi Lin ^{[1
,2
]}

Chin, Wei Mien ^{[2
]}

Bong, Yi Xiang ^{[2
]}

Goh, David ^{[2
]}

Ngwan, Voon Cheng ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore, Singapore

[2] STMicroelectronics, Singapore, Singapore

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

Trench Power Device; Oxide Interface Charges; Forming Gas Annealing;

D O I：

10.1109/JCS57290.2023.10102939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxide interface charges is an important factor to be assessed in technology development especially for a trench-gated power device. The plasma reactive ion etching process is used to form highly vertical trenches whereby the oxide-silicon interface is often saturated by large amount of oxide interface charges. These charges are responsible for the device performance, stability, and long-term reliability degradation. In this work, we characterized the charges by performing various %H-2/N-2 forming gas annealing in FS IGBT and determined the optimal anneal condition to intrinsically passivate the oxide interface charges.

引用

页数：3

共 6 条

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