Logic-In-Memory Characteristics of Reconfigurable Feedback Field-Effect Transistors with Double-Gated Structure

The reconfigurable feedback field-effect transistors (R-FBFETs) with a double-gated structure are designed and the logic and memory operations of a logic-in-memory (LIM) inverter comprising two R-FBFETs are investigated. The R-FBFETs exhibit an extremely low subthreshold swing of approximate to 1 mV dec(-1), a high on/off current ratio of approximate to 10(7), and a long retention time of 10 s, owing to a positive feedback loop mechanism. The on-current ratio of the p- to n-channel modes is 1.03, which indicates a high degree of reconfigurability. The LIM inverter retains the output logic "1" and "0" states for over 50 s under zero-bias conditions. The symmetric reconfigurable switching and memory operations of the R-FBFETs enable the LIM inverter to perform logic and memory operations for a long retention time without a power supply.