Effect of tin concentration on the morphological & crystal structure, and optical properties of chemical vapor deposited MAPb1_xSnxI3 perovskite films for 0 ≤ x ≤ 0.5

被引:0
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作者
Magubane, Siphesihle S. [1 ]
Arendse, Christopher J. [1 ,3 ]
Ngqoloda, Siphelo [1 ]
Mtshali, Christopher [2 ]
机构
[1] Univ Western Cape, Dept Phys & Astron, Private Bag X17, ZA-7535 Bellville, South Africa
[2] Natl Res Fdn, iThemba LABS, POB 722, ZA-7129 Cape Town, South Africa
[3] Univ Western Cape, Nanomicro Mfg Facil, ZA-7535 Bellville, South Africa
基金
新加坡国家研究基金会;
关键词
Low-pressure chemical vapour deposition; Binary metal halide perovskite films; Rutherford backscattering spectrometry; Morphology; Crystal structure; Optical properties; LEAD IODIDE PEROVSKITES; SOLAR-CELL; HALIDE PEROVSKITES; PHOTOVOLTAIC APPLICATIONS; EFFICIENCY; CHLORINE; PROGRESS; CATIONS;
D O I
10.1016/j.nimb.2023.165088
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In this article, we evaluate the impact of Sn proportion on the morphology and crystal structure, and its influence on the optical properties of MAPb(1-x)Sn(x)I(3) (0 <= x < 0.5) perovskite films. The uniform and compact Sn-Pb halide films with a variety of grain sizes were deposited using a low-pressure chemical vapor deposition (LP-CVD) system and were sequentially converted into perovskite films. Rutherford backscattering spectrometry (RBS) measurements were performed to determine the depth profile of elements and the simulated spectra suggested multilayered films. The x-ray diffraction (XRD) patterns confirmed the formation of the perovskite phase, i.e. tetragonal structure with I4cm space group. The energy bandgap (E-g) and the Urbach energy (E-u) approximation insinuate a tradeoff between the attainment of low bandgap Sn-Pb halide perovskites and defect-disorder tolerant films.
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页数:9
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