Ferroelectricity in the Al doped HfO2

被引:13
作者
Chen, Sixue [1 ]
Qin, Pu [1 ]
Yang, Jianxing [1 ]
Chen, Mingming [1 ]
Du, Qianqian [2 ]
Kong, Youchao [3 ]
Liu, Yuan [1 ]
Cao, Dawei [1 ]
机构
[1] Jiangsu Univ, Dept Microelect, Zhenjiang 212013, Jiangsu, Peoples R China
[2] Liaocheng Univ, Sch Phys Sci & Informat Engn, Key Lab Opt Commun Sci & Technol Shandong Prov, Liaocheng 252059, Shandong, Peoples R China
[3] Yancheng Teachers Univ, Dept Phys & Elect Engn, Yancheng 224002, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
Ferroelectric; Al doping; Oxygen vacancy; Density functional theory; HfO2; OXYGEN VACANCIES; THIN-FILM;
D O I
10.1016/j.jallcom.2023.171456
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Recently, hafnia (HfO2)-based ferroelectrics have attracted much attention due to their unique features such as superior ferroelectricity at an ultra-thin thickness, large coercive electric field, and compatibility with the standard silicon process platform. In this work, the growth of ferroelectric HfO2 thin films through Al doping have been demonstrated. Structural analysis showed that non-centrosymmetric polar orthorhombic phase HfO2 have been observed after doping Al. Interestingly, the ferroelectricity was shown to be dependent on the Al composition, where the remnant polarization as high as 2Pr = 22.9 & mu;C/cm2 was obtained in HfO2 thin film with a 5.0 mol% Al doping. The mechanisms of structural transition to ferroelectric orthorhombic-phase owing to oxygen vacancies and generation of oxygen vacancies benefiting from Al doping were further studied by density functional theory calculations. The results shown in this work provide insights into the formation of ferroelectric HfO2 due to Al doping and further offer a simple way for controlled fabrication of ferroelectric HfO2 thin films.
引用
收藏
页数:6
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