Development of photo-diodes for Pohang-Accelerator-Laboratory X-ray free-electron laser

被引：1
作者：
Lee, S. C. [1 ]
Baek, J. M. [1 ]
Hwang, S. M. [2 ]
Hyun, H. J. [2 ]
Kim, J. Y. [2 ]
Kim, S. H. [2 ]
Park, H. [1 ]
机构：
[1] Kyungpook Natl Univ, Dept Phys, Daegu 41566, South Korea
[2] Pohang Accelerator Lab, XFEL Beamline Div, Pohang 37673, South Korea
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2023年 / 1045卷
基金：
新加坡国家研究基金会;
关键词：
PIN photo-diode; Pohang-Accelerator-Laboratory X-ray; free-electron laser; Quantum efficiency; Signal-to-noise ratio; Energy resolution; RADIATION; PHOTODIODES; RESPONSES; BEAM;
D O I：
10.1016/j.nima.2022.167598
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The Pohang-Accelerator-Laboratory X-ray free-electron laser (PAL-XFEL) provides intense ultra-short X-ray pulses via a self-amplified spontaneous emission (SASE) process. Since fluctuations are induced by the intrinsic characteristics of the SASE process, we designed and fabricated photo-diodes (PDs) to be used in quadrant beam position and pop-in monitoring systems for measuring intensity and position, and beam size, respectively. Six 500 mu m-thick high-resistivity silicon wafers were used for different fabrication processes to vary the thicknesses of bias electrode and anti-reflective coating layers optimized for the quantum efficiency (QE) at typical wavelengths of 266 and 400 nm used for pump-probe experiments at the PAL-XFEL. In this paper, we present the electrical characteristics, QE, signal-to-noise ratio, energy resolution of the fabricated PDs, and compared them with those of commercial PD.
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页数：6
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