Development of photo-diodes for Pohang-Accelerator-Laboratory X-ray free-electron laser

被引：2

作者：

Lee, S. C. ^{[1
]}

Baek, J. M. ^{[1
]}

Hwang, S. M. ^{[2
]}

Hyun, H. J. ^{[2
]}

Kim, J. Y. ^{[2
]}

Kim, S. H. ^{[2
]}

Park, H. ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Dept Phys, Daegu 41566, South Korea

[2] Pohang Accelerator Lab, XFEL Beamline Div, Pohang 37673, South Korea

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2023年 / 1045卷

基金：

新加坡国家研究基金会;

关键词：

PIN photo-diode; Pohang-Accelerator-Laboratory X-ray; free-electron laser; Quantum efficiency; Signal-to-noise ratio; Energy resolution; RADIATION; PHOTODIODES; RESPONSES; BEAM;

D O I：

10.1016/j.nima.2022.167598

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The Pohang-Accelerator-Laboratory X-ray free-electron laser (PAL-XFEL) provides intense ultra-short X-ray pulses via a self-amplified spontaneous emission (SASE) process. Since fluctuations are induced by the intrinsic characteristics of the SASE process, we designed and fabricated photo-diodes (PDs) to be used in quadrant beam position and pop-in monitoring systems for measuring intensity and position, and beam size, respectively. Six 500 mu m-thick high-resistivity silicon wafers were used for different fabrication processes to vary the thicknesses of bias electrode and anti-reflective coating layers optimized for the quantum efficiency (QE) at typical wavelengths of 266 and 400 nm used for pump-probe experiments at the PAL-XFEL. In this paper, we present the electrical characteristics, QE, signal-to-noise ratio, energy resolution of the fabricated PDs, and compared them with those of commercial PD.

引用

页数：6

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