A Floating Decremental/Incremental Meminductor Emulator Using Voltage Differencing Inverted Buffered Amplifier and Current Follower

被引:5
|
作者
Aggarwal, Bhawna [1 ]
Rai, Shireesh Kumar [2 ]
Arora, Akanksha [1 ]
Siddiqui, Amaan [1 ]
Das, Rupam [3 ]
机构
[1] Netaji Subhas Univ Technol, Dept Elect & Commun Engn, New Delhi 110078, India
[2] Thapar Inst Engn & Technol, Dept Elect & Commun Engn, Patiala 147004, Punjab, India
[3] Asansol Engn Coll, Dept Elect & Commun Engn, Asansol 713305, West Bengal, India
关键词
Voltage differencing inverted buffered amplifier (VDIBA); current follower (CF); memristor; meminductor; memcapacitor; emulator; MEMRISTOR EMULATOR; CIRCUIT; MEMCAPACITORS; MUTATOR; LESS;
D O I
10.1142/S0218126623502432
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a floating meminductor emulator circuit using a voltage differencing inverted buffered amplifier (VDIBA), current follower (CF), and two grounded capacitors. The parasitic resistance at the input terminal of the current follower has been utilized. The idea of implementing a meminductor emulator is simple and works on the principle of putting memory inside the active inductor circuit. A capacitor (memory element) has been charged by the current flowing through the active inductor circuit. Therefore, the proposed meminductor emulator can be viewed as an active inductor circuit having memory inside it. The proposed floating meminductor emulator works over a significant range of frequencies and satisfies all the characteristics of a meminductor. The meminductor emulator has been realized and simulated in the LTspice simulation tool using TSMC's 180-nm CMOS technology parameters. A chaotic oscillator circuit has been realized using the proposed meminductor emulator to verify its performance. The results obtained for the chaotic oscillators are found to be satisfactory and thus verify the performance of the proposed meminductor emulator.
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页数:32
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