Inter-quintuple layer coupling and topological phase transitions in the chalcogenide topological insulators

被引:1
作者
Shirali, K. [1 ,3 ]
Shelton, W. A. [1 ,2 ]
Vekhter, I [1 ]
机构
[1] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA
[2] Louisiana State Univ, Ctr Computat & Technol, Baton Rouge, LA 70803 USA
[3] Virginia Tech, Dept Phys, Blacksburg, VA 24061 USA
来源
ELECTRONIC STRUCTURE | 2023年 / 5卷 / 01期
关键词
topological insulators; topological phase transitions; chemical bonding; CRYSTALLOGRAPHY OPEN DATABASE; TOTAL-ENERGY CALCULATIONS; OPEN-ACCESS COLLECTION; SINGLE DIRAC CONE; CRYSTAL-STRUCTURE; STATES; STRAIN; SB2TE3; BI2SE3; GAP;
D O I
10.1088/2516-1075/acb6cc
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Driving quantum phase transitions in the 3D topological insulators offers pathways to tuning the topological states and their properties. We use DFT-based calculations to systematically investigate topological phase transitions in Bi2Se3, Sb2Se3, Bi2Te3 and Sb2Te3 by varying the c/a ratio of lattice constants. This ensures no net hydrostatic pressure under anisotropic stress and strain and allows a clear identification of the physics leading to the transition. As a function of c/a, all of these materials exhibit structural and electronic stability of the quintuple layers (QLs), and quasi-linear behavior of both the inter-QL distance and the energy gap near the topological transition. Our results show that the transition is predominantly controlled by the inter-QL physics, namely by competing Coulomb and van der Waals interactions between the outer atomic sheets in neighboring QLs. We discuss the implications of our results for topological tuning by alloying.
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页数:13
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