共 27 条
Study of Eco-Friendly Organic-Inorganic Heterostructure CH3NH3SnI3 Perovskite Solar Cell via SCAPS Simulation
被引:13
作者:
Jha, Prakash Kumar
[1
,2
]
Chourasia, Nitesh K. K.
[3
]
Srivastava, Ankita
[2
]
Sharma, Atish Kumar
[1
,2
]
Kumar, Rakesh
[1
,2
]
Sharma, Subhash
[5
]
Kumar, Manish
[4
]
Chourasia, Ritesh Kumar
[2
]
机构:
[1] Lalit Narayan Mithila Univ, Univ Dept Phys, Darbhanga 846004, India
[2] Samastipur Coll, Constituent Coll LNMU, Postgrad Dept Phys, Darbhanga 846004, Samastipur 848134, Bihar, India
[3] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India
[4] Univ Delhi, ARSD Coll, Dept Phys, Expt Res Lab, New Delhi 110021, India
[5] Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, CONACyT, Km 107 Carretera Tijuana-Ensenada AP 14,BC, Ensenada 22860, Mexico
关键词:
Organic-inorganic perovskite solar cell;
electron affinity;
Gaussian energy distribution;
defect density;
transport layers;
HALIDE PEROVSKITE;
PERFORMANCE;
CU2O;
TEMPERATURE;
EFFICIENCY;
LAYER;
D O I:
10.1007/s11664-023-10267-3
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Lead-based organic-inorganic perovskite (OIP) materials have shown great possibilities as absorber materials in photovoltaic devices. Despite its better power conversion efficiency (PCE), the toxicity of lead limits its application in photovoltaic organic solar cells. This limitation has encouraged researchers to find an alternative lead-free organic perovskite material that must be eco-friendly. Therefore, in this present research work, we have proposed a lead-free OIP heterostructure solar cell using CH3NH3SnI3 as the absorber layer, Cu2O as the hole transport layer (HTL), TiO2 as the electron transport layer (ETL), and FTO as a transparent conducting oxide (TCO) layer. Further, we have carried out a simulation study using SCAPS software to obtain a good performance of the proposed cell by optimizing various parameters. Thus, the obtained simulated results show that a moderate temperature of 305 K is necessary to achieve better cell efficiency. A significant decrease in efficiency is observed upon increasing the operating device temperature. Further, Gaussian energy distribution in the absorber OIP layer, CH3NH3SnI3 , shows better possibilities for obtaining a good performance from the proposed cell. On varying the Gaussian peak defect density from 1 x 10(16) cm(-3) to 6 x 10(20) cm(-3), the best-simulated result is offered at a concentration of 1.079 x 10(16) cm(-3). In addition, on varying the electron affinity of the active layer, we obtained the best result in its class at a value of 4.13 eV. Further, on energy band gap optimization of the active layer, we observed the maximum open-circuit voltage of 1.5 eV. Finally, all the performance parameters for the proposed OIP cell were found to be: PCE 18.27%, short-circuit current density 32.47 mA/cm(2), open-circuit voltage 0.7397 V, and FF 76.06%. Thus, we can proudly say that the present analysis may open a modern doorway for attaining clean energy.
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页码:4321 / 4329
页数:9
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