Influence of Heat Treatment on Lateral Lifetime Charge Carriers and Its Homogeneity in n-type Silicon Wafers

被引：0
|
作者：
Vil'dyaeva, M. N. [1 ]
Klimanov, E. A. [1 ,2 ]
Lyalikov, A. V. [1 ]
Makarova, E. A. [1 ]
Skrebneva, P. S. [1 ]
机构：
[1] JSC Sci & Prod Assoc Orion, Moscow 111538, Russia
[2] Russian Technol Univ MIREA, Moscow 119454, Russia
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2023年 / 68卷 / 03期
关键词：
carrier lifetime; oxygen precipitations; diffusion of boron and phosphorus; EFFICIENCY;
D O I：
10.1134/S1064226923030178
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It has been shown that preliminary heat treatment in oxygen and nitrogen at 1150 degrees C for several hours significantly reduces the nonuniformity in the lifetime distribution of minority charge carriers in Czochralski-grown silicon during subsequent diffusion processes. This result is explained by the formation of a surface zone with a reduced oxygen concentration during annealing, in which the growth of oxygen precipitates is suppressed.
引用
收藏
页码：325 / 329
页数：5
相关论文
共 50 条
  • [41] INFLUENCE OF HEAT-TREATMENT ON LIFETIME OF CARRIERS IN CADMIUM TELLURIDE
    FEDOROVSKII, AN
    KOROVIN, AP
    KIREEV, PS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (11): : 1232 - 1234
  • [42] POSITRON LIFETIME SPECTROSCOPY OF N-TYPE AND P-TYPE POROUS SILICON
    DANNEFAER, S
    BRETAGNON, T
    FOUCARAN, A
    TALIERCIO, T
    KERR, D
    THIN SOLID FILMS, 1995, 255 (1-2) : 171 - 173
  • [43] Field-induced positive oxide charge in radiation-damaged oxide layers on n-type silicon wafers
    Munakata, C
    Mizutani, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (2B): : L290 - L292
  • [44] Oxygen-related defects: minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application
    Kolevatov, I.
    Osinniy, V.
    Herms, M.
    Loshachenko, A.
    Shlyakhov, I.
    Kveder, V.
    Vyvenko, O.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 8, 2015, 12 (08): : 1108 - 1110
  • [45] Onset of ring defects in n-type Czochralski-grown silicon wafers
    Basnet, Rabin
    Phang, Sieu Pheng
    Sun, Chang
    Rougieux, Fiacre E.
    Macdonald, Daniel
    JOURNAL OF APPLIED PHYSICS, 2020, 127 (15)
  • [46] Back junction solar cells on n-type multicrystalline and CZ silicon wafers
    Cuevas, A
    Samundsett, C
    Kerr, MJ
    Macdonald, DH
    Mäckel, H
    Altermatt, PP
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 963 - 966
  • [47] Organic-silicon heterojunction solar cells on n-type silicon wafers: The BackPEDOT concept
    Zielke, Dimitri
    Pazidis, Alexandra
    Werner, Florian
    Schmidt, Jan
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 131 : 110 - 116
  • [48] INFLUENCE OF HEAT TREATMENT OF SILICON ON MINORITY CARRIER LIFETIME
    TOMEK, K
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1970, 20 (02) : 222 - &
  • [49] INFLUENCE OF DIFFERENT THERMAL TREATMENT REGIMES ON THE HALL PARAMETERS AND THE LIFETIME OF CHARGE CARRIERS OF TRANSMUTATION DOPED SILICON CRYSTALS
    Gaidar, G. P.
    JOURNAL OF PHYSICAL STUDIES, 2018, 22 (04):
  • [50] 1-F NOISE OF HOT CARRIERS IN N-TYPE SILICON
    KLEINPENNING, TGM
    PHYSICA B & C, 1981, 103 (2-3): : 340 - 344
12345