Influence of Heat Treatment on Lateral Lifetime Charge Carriers and Its Homogeneity in n-type Silicon Wafers

被引：0
|
作者：
Vil'dyaeva, M. N. [1 ]
Klimanov, E. A. [1 ,2 ]
Lyalikov, A. V. [1 ]
Makarova, E. A. [1 ]
Skrebneva, P. S. [1 ]
机构：
[1] JSC Sci & Prod Assoc Orion, Moscow 111538, Russia
[2] Russian Technol Univ MIREA, Moscow 119454, Russia
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2023年 / 68卷 / 03期
关键词：
carrier lifetime; oxygen precipitations; diffusion of boron and phosphorus; EFFICIENCY;
D O I：
10.1134/S1064226923030178
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It has been shown that preliminary heat treatment in oxygen and nitrogen at 1150 degrees C for several hours significantly reduces the nonuniformity in the lifetime distribution of minority charge carriers in Czochralski-grown silicon during subsequent diffusion processes. This result is explained by the formation of a surface zone with a reduced oxygen concentration during annealing, in which the growth of oxygen precipitates is suppressed.
引用
收藏
页码：325 / 329
页数：5
相关论文
共 50 条
  • [21] TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON
    HAYNES, JR
    HORNBECK, JA
    PHYSICAL REVIEW, 1955, 100 (02): : 606 - 615
  • [22] Influence of copper diffusion on lifetime degradation in n-type Czochralski silicon for solar cells
    Gaspar, Guilherme
    Modanese, Chiara
    Schon, Hendrik
    Di Sabatino, Marisa
    Arnberg, Lars
    Ovrelid, Eivind J.
    5TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2015, 2015, 77 : 586 - 591
  • [23] INFLUENCE OF DISLOCATION ON LIFETIME OF NON-BASIC CHARGE CARRIERS IN SILICON
    SAKHAROV, BA
    TUROVSKI.BM
    FROLOV, AV
    DOKLADY AKADEMII NAUK SSSR, 1968, 180 (05): : 1101 - &
  • [24] POSITRON LIFETIME MEASUREMENTS IN N-TYPE AND P-TYPE SILICON
    DORIKENS, M
    DAUWE, C
    DORIKENS.L
    APPLIED PHYSICS, 1974, 4 (03): : 271 - 272
  • [25] Photoelectronic characterization of n-type silicon wafers using photocarrier radiometry
    Gutierrez, A.
    Rodriguez-Garcia, M. E.
    Giraldo, J.
    PHYSICA B-CONDENSED MATTER, 2011, 406 (19) : 3687 - 3693
  • [26] Surface and volume decay times of photoconductivity in n-type silicon wafers
    Munakata, Chusuke
    Suzuki, Takumi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (01): : 243 - 244
  • [27] Surface and volume decay times of photoconductivity in n-type silicon wafers
    Munakata, Chusuke
    Suzuki, Takumi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (01): : 243 - 244
  • [28] CONTACTLESS MEASUREMENT OF SHORT CARRIER LIFETIME IN HEAT-TREATED N-TYPE SILICON.
    Yamazaki, Tatsuya
    Ogita, Yoh-ichiro
    Ikegami, Yoshikazu
    Onaka, Hiroshi
    Ohta, Eiji
    Sakata, Makoto
    1600, (23):
  • [29] PRESSURE AND TEMPERATURE DEPENDENCES OF LIFETIME OF NONEQUILIBRIUM CARRIERS IN N-TYPE INSB
    ABDUVAKHIDOV, KM
    GALAVANOV, VV
    ODING, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 242 - 244
  • [30] N-type multicrystalline silicon wafers and rear junction solar cells
    Martinuzzi, S
    Palais, O
    Pasquinelli, M
    Ferrazza, F
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2005, 32 (03): : 187 - 192
12345