Influence of Heat Treatment on Lateral Lifetime Charge Carriers and Its Homogeneity in n-type Silicon Wafers

被引：0
|
作者：
Vil'dyaeva, M. N. [1 ]
Klimanov, E. A. [1 ,2 ]
Lyalikov, A. V. [1 ]
Makarova, E. A. [1 ]
Skrebneva, P. S. [1 ]
机构：
[1] JSC Sci & Prod Assoc Orion, Moscow 111538, Russia
[2] Russian Technol Univ MIREA, Moscow 119454, Russia
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2023年 / 68卷 / 03期
关键词：
carrier lifetime; oxygen precipitations; diffusion of boron and phosphorus; EFFICIENCY;
D O I：
10.1134/S1064226923030178
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It has been shown that preliminary heat treatment in oxygen and nitrogen at 1150 degrees C for several hours significantly reduces the nonuniformity in the lifetime distribution of minority charge carriers in Czochralski-grown silicon during subsequent diffusion processes. This result is explained by the formation of a surface zone with a reduced oxygen concentration during annealing, in which the growth of oxygen precipitates is suppressed.
引用
收藏
页码：325 / 329
页数：5
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