Influence of Heat Treatment on Lateral Lifetime Charge Carriers and Its Homogeneity in n-type Silicon Wafers

被引：0
|
作者：
Vil'dyaeva, M. N. [1 ]
Klimanov, E. A. [1 ,2 ]
Lyalikov, A. V. [1 ]
Makarova, E. A. [1 ]
Skrebneva, P. S. [1 ]
机构：
[1] JSC Sci & Prod Assoc Orion, Moscow 111538, Russia
[2] Russian Technol Univ MIREA, Moscow 119454, Russia
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2023年 / 68卷 / 03期
关键词：
carrier lifetime; oxygen precipitations; diffusion of boron and phosphorus; EFFICIENCY;
D O I：
10.1134/S1064226923030178
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It has been shown that preliminary heat treatment in oxygen and nitrogen at 1150 degrees C for several hours significantly reduces the nonuniformity in the lifetime distribution of minority charge carriers in Czochralski-grown silicon during subsequent diffusion processes. This result is explained by the formation of a surface zone with a reduced oxygen concentration during annealing, in which the growth of oxygen precipitates is suppressed.
引用
收藏
页码：325 / 329
页数：5
相关论文
共 50 条
  • [1] Influence of Heat Treatment on Lateral Lifetime Charge Carriers and Its Homogeneity in n-type Silicon Wafers
    M. N. Vil’dyaeva
    E. A. Klimanov
    A. V. Lyalikov
    E. A. Makarova
    P. S. Skrebneva
    Journal of Communications Technology and Electronics, 2023, 68 : 325 - 329
  • [2] Effect of Iron Chloride Solutions on Charge Carriers' Lifetime in Silicon Wafers
    Manilov, A., I
    Litvinenko, S., V
    Skryshevsky, V. A.
    Alekseev, S. A.
    2019 IEEE 2ND UKRAINE CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (UKRCON-2019), 2019, : 739 - 742
  • [3] LIFETIME STUDY OF METASTABLE SURFACE RECOMBINATION CENTERS IN N-TYPE SILICON-WAFERS
    DAIO, H
    BUCZKOWSKI, A
    SHIMURA, F
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (06) : 1590 - 1593
  • [4] A contactless device for determining the lifetime of minor charge carriers in silicon wafers with p-n-junctions
    Koshelev, OG
    Morozova, VA
    INDUSTRIAL LABORATORY, 2000, 66 (10): : 669 - 670
  • [5] INFLUENCE OF ANNEALING ON LIFETIME OF MINORITY-CARRIERS IN N-TYPE CDS FILMS
    VALYOMANA, AG
    VIJAYAKUMAR, KP
    PURUSHOTHAMAN, C
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1992, 11 (02) : 76 - 78
  • [6] Lateral homogeneity of Schottky contacts on n-type ZnO
    von Wenckstern, H
    Kaidashev, EM
    Lorenz, M
    Hochmuth, H
    Biehne, G
    Lenzner, J
    Gottschalch, V
    Pickenhain, R
    Grundmann, M
    APPLIED PHYSICS LETTERS, 2004, 84 (01) : 79 - 81
  • [7] Study of lifetime of minority carriers in phosphorous and boron ion implanted n-type silicon
    Chavan, ST
    Virdi, GS
    Bhoraskar, VN
    SEMICONDUCTOR DEVICES, 1996, 2733 : 490 - 492
  • [8] Gettering Mechanism of Copper in n-Type Silicon Wafers
    Ozaki, Rie
    Torigoe, Kazuhisa
    Mizuno, Taisuke
    Yamamoto, Kazuhiro
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (17):
  • [9] N-type multicrystalline silicon wafers for solar cells
    Martinuzzi, S
    Palais, O
    Pasquinelli, M
    Barakel, D
    Ferrazza, F
    CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005, 2005, : 919 - 922
  • [10] SCATTERING ANISOTROPY OF CARRIERS IN N-TYPE SILICON
    BARANSKII, PI
    DAKHOVSKII, IV
    KOLOMOETS, VV
    FEDOSOV, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 798 - 800
12345