A physics-based model of dielectric modulated TFET biosensor considering non-ideal hybridization issue

被引:9
作者
Dewan, Basudha [1 ]
Chaudhary, Shalini [2 ]
Singh, Devenderpal [2 ]
Yadav, Menka [2 ]
机构
[1] Poornima Univ, ECE Dept, Jaipur 303905, Rajasthan, India
[2] MNIT Jaipur, ECE Dept, Jaipur 302017, Rajasthan, India
来源
MICRO AND NANOSTRUCTURES | 2023年 / 183卷
关键词
Analytical model; Biosensor; Dielectric modulation; Physics-based model; Poisson's equation; Sensitivity; TFET; FIELD-EFFECT TRANSISTOR; LABEL-FREE DETECTION; DOPED VERTICAL TFET; GATE TUNNEL FET; PERFORMANCE ANALYSIS; SENSITIVITY; CHANNEL; DESIGN;
D O I
10.1016/j.micrna.2023.207668
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
This article investigates the functionality of Dielectric Modulated-Tunnel Field Effect Transistor (DM-TFET) based biosensor using an analytical model created for the electrostatic potential, electric field and drain current. Channel potential and electric field are determined by solving the 2-D Poisson's equation using the parabolic approximation approach. The drain current is estimated by calculating the generation rate of tunneling using Kane's model. The model illustrates the implications of dielectric constant (k) and charge (NBio) and provides a generic solution that works for both neutral and charged biomolecules. The effect of different biasing conditions and parametric variations on electrical properties of the channel is also studied. Capacitances are modeled for different fill factors of biomolecules entrapped in the cavity region. The model demonstrates its resilience by reacting to different fill factors. The analytical findings are validated using data from SILVACO ATLAS simulations. The comparative sensitivity analysis presented highlights the improvement provided by our proposed work.
引用
收藏
页数:13
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