Temperature and composition dependence of thermophysical properties within a wide temperature range for ternary Si-Ge-Ag alloys

The thermophysical properties of Si-Ge-Ag alloys in a broad temperature range are essential for the design of electronic devices. In this work, relationships between specific heat, thermal expansion, thermal conductivity and temperature, as well as chemical composition of Si-Ge-Ag alloys were clarified. Moreover, various thermophysical properties' prediction strategies of multicomponent alloys from pure elements were evaluated. The specific heat of Ag-Si, Ag-Ge, Si-Ge, and Si-Ge-Ag alloys was determined by the differential scanning method. The results showed a significant increase with rising temperature at low temperatures followed by a gradual rise at high temperatures. The specific heat reached the maximum value when a small amount of Si/Ge was introduced to Ag. The coefficient of thermal expansion was obtained by a dilatometric method and increased slightly with the increasing temperature, while decreased linearly with the increase in the Si/Ge content. Furthermore, the thermal conductivity was investigated via a laser flash apparatus. It decreased with rising temperature when the Ag content is smaller than 50%, whereas it increased with rising temperature when the Ag content exceeds 50%. The thermal conductivity of Si-Ge alloys decreased with rising temperature and reached the local minimum for Si-Ge alloys with an equiatomic ratio of Si and Ge. More importantly, the experimental results reveal that the thermal expansion that is related to volume can be estimated approximately by pure metals in Si-Ge-Ag alloys. However, this rule cannot be applied to specific heat and thermal conductivity, which is due to the influence of lattice vibration, electronic scattering, and microstructure.