A Study of Ultrafast Ablation on ITO Thin Films with Wavelengths of 513 and 1026 nm for High Resolution Patterning

被引:9
作者
Choi, Junha [1 ,2 ]
Cho, Sung-Hak [1 ,2 ]
机构
[1] Korea Univ Sci & Technol, Dept Nanomechatron, Daejeon, South Korea
[2] Korea Inst Machinery & Mat, Dept Nanomfg Technol, Nanoconvergence Mfg Syst Res Div, Daejeon, South Korea
关键词
Laser ablation; Pulse energy; Pulse duration; Number of pulses; Non-thermal property; INDIUM-TIN-OXIDE; FEMTOSECOND LASER-ABLATION; PICOSECOND; SURFACE; DIELECTRICS; BREAKDOWN; METALS;
D O I
10.1007/s12541-023-00868-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Indium tin oxide (ITO) exhibits transparency and high electrical conductivity in the visible and near-IR wavelength ranges. Therefore, ITO is used in liquid crystal displays, organic light-emitting diodes, photovoltaics, and solar cells. However, ITO must be partially ablated before employing it in applications. High-resolution patterning technology is required to obtain the desired ITO morphology, and accordingly, various technologies have been developed. Recently, ultrafast lasers have been widely used for controlled ablation because of their non-thermal properties caused by short pulse widths. This study analyzes the changes in ablation characteristics as a function of various parameters such as pulse energy, pulse duration, number of pulses, and wavelength. We show that the optimized ablation characteristics could lead to the efficient formation of the desired morphology of ITO.
引用
收藏
页码:1975 / 1988
页数:14
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