X-ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy

被引：2

作者：

Kaganer, Vladimir M. ^{[1
]}

Konovalov, Oleg, V ^{[2
]}

Calabrese, Gabriele ^{[1
,3
]}

van Treeck, David ^{[1
]}

Kwasniewski, Albert ^{[4
]}

Richter, Carsten ^{[4
]}

Fernandez-Garrido, Sergio ^{[1
,5
,6
]}

Brandt, Oliver ^{[1
]}

机构：

[1] Leibniz Inst Forsch Verbund Berlin eV, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

[2] ESRF European Synchrotron, 71 Ave Martyrs, F-38043 Grenoble, France

[3] CNR, Ist Microelettron & Microsistemi, Via Gobetti 101, I-40129 Bologna, Italy

[4] Leibniz Inst Kristallzuchtung IKZ, Max Born Str 2, D-12489 Berlin, Germany

[5] Univ Politecn Madrid, Inst Optoelect Syst & Microtechnol ISOM, Ave Complutense 30, E-28040 Madrid, Spain

[6] Univ Politecn Madrid, Mat Sci Dept, Ave Complutense 30, E-28040 Madrid, Spain

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 2023年 / 56卷

关键词：

GaN nanowires; grazing-incidence small-angle X-ray scattering; GISAXS; molecular beam epitaxy; topotaxy; STRAIN; METAL; NANORODS;

D O I：

10.1107/S1600576723001486

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al2O3 are studied by X-ray diffraction (XRD) and grazing-incidence smallangle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection mode and at grazing incidence, reveals Ti, TiN, Ti3O, Ti3Al and Ga2O3 crystallites with in-plane and out-of-plane lattice parameters intermediate between those of Al2O3 and GaN. These topotaxial crystallites in the Ti film, formed as a result of interfacial reactions and N exposure, possess little misorientation with respect to Al2O3. As a result, GaN NWs grow on the top TiN layer, possessing a high degree of epitaxial orientation with respect to the substrate. The measured GISAXS intensity distributions are modelled by the Monte Carlo method, taking into account the orientational distributions of NWs, the variety of their cross-sectional shapes and sizes, and the roughness of their side facets. The cross-sectional size distributions of the NWs and the relative fractions of the {1 (1) over bar 00} and {11 (2) over bar0} side facets are determined.

引用

页码：439 / 448

页数：10

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