Tutorial: Lead sulfide colloidal quantum dot infrared photodetector

被引：12

作者：

Wu, Haobo ^{[1
]}

Ning, Zhijun ^{[1
]}

机构：

[1] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2023年 / 133卷 / 04期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT; NUCLEATION; GROWTH; NANOCRYSTALS; PERFORMANCE; INKS; HETEROJUNCTION; MONODISPERSE; KINETICS;

D O I：

10.1063/5.0133809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lead sulfide (PbS) colloidal quantum dots (CQDs) is emerging as a promising material for infrared photodetectors because of its strong absorbance in the near infrared region, the tunable energy gap, facile fabrication, and excellent electrical properties. This Tutorial gives a comprehensive introduction of materials and devices of PbS CQD based infrared photodetectors. First, we introduce the concept of CQDs and the typical characters of CQDs. The synthesis of PbS CQDs and a solid film fabrication method are then summarized. Subsequently, the study for defect passivation and carrier transport in a PbS CQD thin film is presented. In the end, the device structure, the electrical diagram, and strategies for enhancing device performance of three kinds of infrared photodetector are concluded.

引用

页数：15

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