Fast-Response Micro-Phototransistor Based on MoS2/Organic Molecule Heterojunction

被引:14
作者
Andleeb, Shaista [1 ,2 ,3 ]
Wang, Xiaoyu [2 ,4 ]
Dong, Haiyun [2 ]
Valligatla, Sreeramulu [2 ]
Saggau, Christian Niclaas [1 ,2 ,3 ]
Ma, Libo [2 ]
Schmidt, Oliver G. G. [1 ,2 ,3 ,5 ]
Zhu, Feng [6 ]
机构
[1] Tech Univ Chemnitz, Mat Syst Nanoelect, D-09107 Chemnitz, Germany
[2] Leibniz Inst Festkoper & Werkstoffforschung Dresde, D-01069 Dresden, Germany
[3] Tech Univ Chemnitz, Res Ctr Mat Architectures & Integrat Nanomembranes, D-09126 Chemnitz, Germany
[4] Hainan Univ, Sch Sci, Dept Phys, Haikou 570228, Peoples R China
[5] Tech Univ Dresden, Sch Sci, D-01069 Dresden, Germany
[6] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
关键词
transition metal dichalcogenides; MoS2; organic molecule; VOPc; phototransistor; heterostructure; GRAPHENE;
D O I
10.3390/nano13091491
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Over the past years, molybdenum disulfide (MoS2) has been the most extensively studied two-dimensional (2D) semiconductormaterial. With unique electrical and optical properties, 2DMoS(2) is considered to be a promising candidate for future nanoscale electronic and optoelectronic devices. However, charge trapping leads to a persistent photoconductance (PPC), hindering its use for optoelectronic applications. To overcome these drawbacks and improve the optoelectronic performance, organic semiconductors (OSCs) are selected to passivate surface defects, tune the optical characteristics, and modify the doping polarity of 2D MoS2. Here, we demonstrate a fast photoresponse in multilayer (ML) MoS2 by addressing a heterojunction interface with vanadylphthalocyanine (VOPc) molecules. The MoS2/VOPc van der Waals interaction that has been established encourages the PPC effect in MoS2 by rapidly segregating photo-generated holes, which move away from the traps of MoS2 toward the VOPc molecules. The MoS2/VOPc phototransistor exhibits a fast photo response of less than 15 ms for decay and rise, which is enhanced by 3ordersof magnitude in comparison to that of a pristine MoS2-based phototransistor (seconds to tens of seconds). This work offers a means to realize high-performance transition metal dichalcogenide (TMD)-based photodetection with a fast response speed.
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页数:11
相关论文
共 56 条
[1]   MoS2 field-effect transistor with graphene contacts [J].
Andleeb, Shaista ;
Eom, Jonghwa ;
Naz, Nabila Rauf ;
Singh, Arun Kumar .
JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (32) :8308-8314
[2]   Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides [J].
Ayari, Anthony ;
Cobas, Enrique ;
Ogundadegbe, Ololade ;
Fuhrer, Michael S. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)
[3]   XPS investigation of preferential sputtering of S from MoS2 and determination of MoSx stoichiometry from Mo and S peak positions [J].
Baker, MA ;
Gilmore, R ;
Lenardi, C ;
Gissler, W .
APPLIED SURFACE SCIENCE, 1999, 150 (1-4) :255-262
[4]   Modulating Optoelectronic Properties of Two Dimensional Transition Metal Dichalcogenide Semiconductors by Photoinduced Charge Transfer [J].
Choi, Jungwook ;
Zhang, Hanyu ;
Choi, Jong Hyun .
ACS NANO, 2016, 10 (01) :1671-1680
[5]   High Performance Multilayer MoS2 Transistors with Scandium Contacts [J].
Das, Saptarshi ;
Chen, Hong-Yan ;
Penumatcha, Ashish Verma ;
Appenzeller, Joerg .
NANO LETTERS, 2013, 13 (01) :100-105
[6]   Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate [J].
Dolui, Kapildeb ;
Rungger, Ivan ;
Sanvito, Stefano .
PHYSICAL REVIEW B, 2013, 87 (16)
[7]   Photogating in Low Dimensional Photodetectors [J].
Fang, Hehai ;
Hu, Weida .
ADVANCED SCIENCE, 2017, 4 (12)
[8]   SPECTRAL DEPENDENCE OF THE ANISOTROPY OF CHI((3)) OF EPITAXIALLY GROWN VANADYL PHTHALOCYANINE FILM [J].
FANG, SL ;
KOHAMA, K ;
HOSHI, H ;
MARUYAMA, Y .
CHEMICAL PHYSICS LETTERS, 1995, 234 (4-6) :343-347
[9]   Chemical and Electronic Repair Mechanism of Defects in MoS2 Monolayers [J].
Foerster, Anja ;
Gemming, Sibylle ;
Seifert, Gotthard ;
Tomanek, David .
ACS NANO, 2017, 11 (10) :9989-9996
[10]  
Furchi MM, 2014, NANO LETT, V14, P6165, DOI [10.1021/nl502339q, 10.1021/n1502339q]