Experimental Demonstration of an Integrated Bidirectional Gate ESD Protection Structure for p-GaN Power HEMTs

被引：8

作者：

Xin, Yajie ^{[1
]}

Chen, Wanjun ^{[1
]}

Sun, Ruize ^{[1
]}

Wang, Fangzhou ^{[1
]}

Liu, Chao ^{[1
]}

Deng, Xiaochuan ^{[1
]}

Li, Zhaoji ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 02期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

Electrostatic discharge (ESD); p-GaN HEMTs; transmission line pulsing (TLP);

D O I：

10.1109/LED.2022.3227321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter experimentally demonstrates an integrated bidirectional protection structure to improve the p-GaN power HEMTs' gate ESD reliability. The protection structure comprises an event-triggeringp-GaN HEMT, a lowside resistor RL, and a high-side resistor R-H. The critical parameters such as transmission line pulsing (TLP) failure current, trigger voltage VTrig and leakage current I-leak are evaluated by TLP testing. It is validated that this protection structure can sustain a forward TLP failure current up to 1.42 A (equivalent human body model passing voltage V-HBM approximate to 2.13 kV) and a reverse TLP failure current up to 3.06 A (V-HBM approximate to 4.59 kV) without sacrificing the protected device's performance. In addition, it is verified that the TLP failure current can be adjusted by the event-triggering p-GaN HEMT's active area and R-H/R-L ratio.

引用

页码：209 / 212

页数：4

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