Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

被引：0

作者：

Bondarenko, D. N. ^{[1
,2
]}

Gridchin, V. O. ^{[1
,2
,3
]}

Kotlyar, K. P. ^{[1
]}

Reznik, R. R. ^{[1
,2
,3
]}

Kirilenko, D. A. ^{[4
]}

Baranov, A. I. ^{[2
]}

Dragunova, A. S. ^{[2
,5
]}

Kryzhanovskaya, N. V. ^{[5
]}

Maksimova, A. A. ^{[2
]}

Cirlin, G. E. ^{[1
,2
,3
,4
]}

机构：

[1] St Petersburg State Univ, St Petersburg, Russia

[2] Alferov Univ, St Petersburg, Russia

[3] IAI RAS, St Petersburg, Russia

[4] Ioffe Inst, St Petersburg, Russia

[5] HSE Univ, St Petersburg, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 01期

基金：

俄罗斯科学基金会;

关键词：

GaN; InGaN nanowires; micro light-emitting diodes; plasma-assisted molecular beam epitaxy; thick core-shell InGaN insertions;

D O I：

10.18721/JPM.161.227

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An approach to the fabrication of LED structure based on GaN nanowires with thick core-shell InGaN insertions with high indium content is studied. The results of optical measurements demonstrate the photoluminescence from the InGaN insertions in the green spectrum at room temperature. The study of electrical properties shows typical diode dependence. The results can be crucial for the development of light-emitting diodes on Si substrates.

引用

页码：179 / 184

页数：6

共 7 条

[1] Semiconductor nanowhiskers: Synthesis, properties, and applications [J].

Dubrovskii, V. G. ;

Cirlin, G. E. ;

Ustinov, V. M. .

SEMICONDUCTORS, 2009, 43 (12) :1539-1584

[2] Multi-colour light emission from InGaN nanowires monolithically grown on Si substrate by MBE [J].

Gridchin, Vladislav O. ;

Kotlyar, Konstantin P. ;

Reznik, Rodion R. ;

Dragunova, Anna S. ;

Kryzhanovskaya, Natalia, V ;

Lendyashova, Vera V. ;

Kirilenko, Demid A. ;

Soshnikov, Ilya P. ;

Shevchuk, Dmitrii S. ;

Cirlin, George G. .

NANOTECHNOLOGY, 2021, 32 (33)

[3] Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays [J].

Ha Quoc Thang Bui ;

Velpula, Ravi Teja ;

Jain, Barsha ;

Aref, Omar Hamed ;

Hoang-Duy Nguyen ;

Lenka, Trupti Ranjan ;

Hieu Pham Trung Nguyen .

MICROMACHINES, 2019, 10 (08)

[4] Solid phase immiscibility in GaInN [J].

Ho, IH ;

Stringfellow, GB .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703

[5] Metal-induced gap states and Schottky barrier heights at nonreactive GaN/noble-metal interfaces [J].

Picozzi, S ;

Continenza, A ;

Satta, G ;

Massidda, S ;

Freeman, AJ .

PHYSICAL REVIEW B, 2000, 61 (24) :16736-16742

[6] Circumventing the miscibility gap in InGaN nanowires emitting from blue to red [J].

Roche, Elissa ;

Andre, Yamina ;

Avit, Geoffrey ;

Bougerol, Catherine ;

Castelluci, Dominique ;

Reveret, Francois ;

Gil, Evelyne ;

Medard, Francois ;

Leymarie, Joel ;

Jean, Theo ;

Dubrovskii, Vladimir G. ;

Trassoudaine, Agnes .

NANOTECHNOLOGY, 2018, 29 (46)

[7] Nanowire photonics [J].

Yan, Ruoxue ;

Gargas, Daniel ;

Yang, Peidong .

NATURE PHOTONICS, 2009, 3 (10) :569-576

← 1 →