A Kinetic Monte Carlo Simulation Study of WS2 RRAM with Different 2D Layer Thickness

被引：0
|
作者：
Chen, Ying-Chuan [1 ,2 ]
Chao, Yu-Ting [1 ]
Chen, Edward [2 ]
Wu, Chao-Hsin [1 ]
Wu, Yuh-Renn [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
[2] Taiwan Semicond Mfg Co Ltd, Corp Res, Hsinchu 30078, Taiwan
来源：
2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT | 2023年
关键词：
WS2; RRAM; KMC; activation energy; retention time; breakdown electric field;
D O I：
10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134133
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 2D RRAM made by WS2 with different active layer thickness has been studied including experiments and simulations. The physical parameters in the KMC model have been obtained through data calibration. The model has prediction power for I-V characteristics, retention time, and breakdown electric field for a WS2 RRAM with different 2D layer thickness. This work reveals fundamental differences between a 2D RRAM and a conventional oxide RRAM.
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页数：2
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