Spin Hall rectification effect in heavy metal/ferromagnetic metal bilayers

被引：0

作者：

Cui, Xiaotian ^{[1
]}

Wang, Shun ^{[1
]}

Zhang, Changwen ^{[1
]}

Cao, Qiang ^{[1
]}

Huang, Qikun ^{[1
,2
]}

机构：

[1] Univ Jinan, Spintron Inst, Jinan 250022, Peoples R China

[2] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

MATERIALS LETTERS | 2023年 / 342卷

基金：

中国国家自然科学基金;

关键词：

Spin rectification; Spin Hall effect; Spin -dependent scattering; Unidirectional spin Hall magnetoresistance; MAGNETORESISTANCE; FIELD;

D O I：

10.1016/j.matlet.2023.134306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The rectification effect is a fundamental physical property of heterojunctions, which has wide applications in microelectronic and spintronic devices. Here we report a spin Hall rectification effect (SHRE) in heavy-metal/ ferromagnetic metal (FM) bilayers under current-in-plane geometry, in which a pure sinusoidal alternating current along the current channel of Hall bar can generate a longitudinal rectification direct-current voltage. The rectification mechanism stems from spin Hall effect of heavy metals as well as spin-dependent asymmetric scattering associated with current polarity. Experimental results show that SHRE couples with magnetic infor-mation, and thus is non-volatile and controllable depending on the magnetization direction of FM layer, which opens up a new avenue for spintronics diode engineering based on SHRE.

引用

页数：4

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