Evolution between RS and NRS behaviors in BiFeO3@egg albumen nanocomposite based memristor

被引：6
作者：
Qin, Jiajia [1 ]
Sun, Bai [2 ]
Zhou, Yongzan [3 ]
Du, Junmei [4 ]
Cao, Zelin [2 ]
Mao, Shuangsuo [1 ]
Yang, Yusheng [1 ]
Liu, Mingnan [1 ]
Rao, Zhaowei [1 ]
Ke, Chuan [5 ]
Zhao, Yong [1 ,5 ]
机构：
[1] Fujian Normal Univ, Coll Phys & Energy, Fujian Prov Collaborat Innovat Ctr Adv High Field, Fuzhou 350117, Peoples R China
[2] Xi An Jiao Tong Univ, Frontier Inst Sci & Technol FIST, Xian 710049, Shanxi, Peoples R China
[3] Univ Waterloo, Waterloo Inst Nanotechnol WIN, Dept Mech & Mechatron Engn, Waterloo, ON N2L 3G1, Canada
[4] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Adv Technol Mat, Minist Educ, Chengdu 610031, Sichuan, Peoples R China
[5] Southwest Jiaotong Univ, Sch Elect Engn, Chengdu 610031, Sichuan, Peoples R China
来源：
CURRENT APPLIED PHYSICS | 2024年 / 59卷
基金：
中国国家自然科学基金;
关键词：
Resistance switching; Negative differential resistance; BiFeO3; Egg albumen; Ohmic conduction; Schottky emission; NEGATIVE DIFFERENTIAL RESISTANCE; RESISTIVE SWITCHING MEMORIES; COEXISTENCE; BIFEO3; DIODE;
D O I：
10.1016/j.cap.2023.12.015
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The coupling of resistance switching (RS) behavior and N-type negative differential resistance (NDR) effect provides a promising physical basis for the preparation of low-power and multifunctional electronic devices. Ntype NDR effect can be expressed by the relationship between peak voltage (VP), valley voltage (VV) and the homologous current (IP, IV). In this work, a memristive device with Ag/BFO@EA/FTO structure was prepared by inserting BiFeO3 (BFO) nanoparticles into egg albumen (EA) as the functional layer, and observed the evolution between RS and NDR coupled RS (NRS) behaviors with the regulation of applied voltage window. Besides, it can be observed a wide current gap of 18.6 mA between IP and IV in the narrow voltage gap (about 0.4 V) between VP and VV, indicating that the device has low power consumption and fast reading/writing speed when it is applied to information processing. Finally, based on the obtained data, it was deeply analyzed the mechanism of NRS effect in the Ag/BFO@EA/FTO memristive device. Therefore, this work provides a new perspective for realizing multi-level storage and multifunctional advanced applications in the memristive device.
引用
收藏
页码：77 / 84
页数：8
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