Fabrication and Characterization of TiO2 Thin Film-Nanorod-Based Hybrid Structures for Memristor Applications

A hydrothermal process was used to grow titanium dioxide (TiO2) nanorods on p-type silicon substrates, and a dip-coating process was then used to fabricate TiO2 thin film-nanorod hybrid structures. The nanorod-like structures were obtained for processing temperatures of 160(degrees)C and 180(degrees)C. The thin films were dip-coated on the nanorods with a withdrawal speed of 1 cm/min. Afterwards, thin film-nanorod hybrid structures were annealed at 500(degrees)C for 1 h. Morphological characterization carried out by scanning electron microscopy (SEM) studies confirmed the formation of nanorods. XRD and Raman studies confirmed the presence of anatase and rutile phases of TiO2-based hybrid structures. The oxide charge density (Q(ox)) and the interface charge density (D-it) of the hybrid structures were measured from the capacitance-voltage (C-V) plot. Q(ox) and D-it were calculated as 2.29 x 10(12 )cm(-2) and 0.89 x 10(12) eV(-1 )cm(-2), respectively, for a temperature of 180(degrees)C and growth time of 60 min. The resistive switching properties of TiO2-based hybrid structures showed a good on/off ratio, and hence the hybrid structure-based device can be considered a suitable element for memory devices.