Ion track formation and porosity in InSb induced by swift heavy ion irradiation

被引：0

作者：

Alwadi, Taleb ^{[1
]}

Notthoff, Christian ^{[1
,2
]}

Dutt, Shankar ^{[1
]}

Wierbik, Jessica ^{[1
]}

Afrin, Nahid ^{[1
]}

Kiy, Alexander ^{[1
]}

Kluth, Patrick ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys, Dept Mat Phys, Acton, ACT 2601, Australia

[2] Australian Natl Univ, Res Sch Phys, Dept Nucl Phys & Accelerator Applicat, Canberra, ACT 2601, Australia

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2023年 / 41卷 / 06期

基金：

澳大利亚研究理事会;

关键词：

SEMICONDUCTORS;

D O I：

10.1116/6.0003007

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ion track formation, irradiation-induced damage (amorphization), and the formation of porosity in InSb after 185 MeV Au-197 swift heavy ion irradiation are studied as a function of ion fluence and irradiation angle. Rutherford backscattering spectrometry in channeling geometry reveals an ion track radius of about 16 nm for irradiation normal to the surface and 21 nm for off-normal irradiation at 30(degrees) and 60(degrees). Cross-sectional scanning electron microscopy shows significant porosity that increases when irradiation was performed off-normal to the surface. Off-normal irradiation shows a preferential orientation of the pores at about 45(degrees) relative to the surface normal. Moreover, when subjected to identical conditions, InSb samples demonstrate notably higher swelling compared to GaSb bulk samples.

引用

页数：7

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