Polarization-Sensitive, Self-Powered, and Broadband Semimetal MoTe2/MoS2 van der Waals Heterojunction for Photodetection and Imaging

被引:21
|
作者
Kong, Lingxian [1 ]
Li, Guangliang [2 ]
Su, Qi [2 ]
Tan, Xianhua [1 ,3 ]
Zhang, Xuning [1 ]
Liu, Zhiyong [1 ]
Liao, Guanglan [1 ]
Sun, Bo [2 ]
Shi, Tielin [1 ]
机构
[1] Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Aerosp Engn, Wuhan 430074, Peoples R China
[3] Cent South Univ, Sch Mech & Elect Engn, Changsha 410083, Peoples R China
基金
中国国家自然科学基金;
关键词
1T' MoTe2; polarization-sensitive; heterojunction; photodetector; polarized imaging; HETEROSTRUCTURES;
D O I
10.1021/acsami.3c07709
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The emerging type II Weyl semimetal 1T' MoTe2 as a promising material in polarization-sensitive photodetectors has aroused much attention due to its narrow bandgap and intrinsic inplane anisotropic crystal structure. However, the semimetal properties lead to a large dark current and a low response. Herein, we demonstrate for the first time an all-2D semimetal MoTe2/ MoS2 van der Waals (vdWs) heterojunction to improve the performance of the photodetectors and realize polarizationsensitive, self- powered, and broadband photodetection and imaging. Owing to the built-in electric field of the heterojunction, the device achieves a self-powered photoresponse ranging from 520 to 1550 nm. Under 915 nm light illumination, the device demonstrates outstanding performance, including a high responsivity of 79 mA/W, a specific detectivity of 1.2 x 10(10) Jones, a fast rise/decay time of 180/202 mu s, and a high on/off ratio of 1.3 x 10.(3) Wavelength-dependent photocurrent anisotropic ratio is revealed to vary from 1.10 at 638 nm to 2.24 at 1550 nm. Furthermore, we demonstrate the polarization imaging capabilities of the device in scattering surroundings, and the DoLP and AoLP images achieve 78% and 112% contrast enhancement, respectively, compared to the S-0. This work opens up new avenues to develop anisotropic semimetals heterojunction photodetectors for highperformance polarization-sensitive photodetection and next-generation polarized imaging.
引用
收藏
页码:43135 / 43144
页数:10
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