Recent Advances in Ferroelectric-Enhanced Low-Dimensional Optoelectronic Devices

被引:21
作者
Iqbal, Muhammad Ahsan [1 ]
Xie, Haowei [1 ]
Qi, Lu [2 ]
Jiang, Wei-Chao [1 ]
Zeng, Yu-Jia [1 ]
机构
[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Shenzhen 518060, Peoples R China
[2] Shenzhen Technol Univ, Key Lab Adv Opt Precis Mfg Technol, Guangdong Higher Educ Inst, Shenzhen 518118, Peoples R China
基金
中国国家自然科学基金;
关键词
ferroelectric materials; low-dimensional materials; nonvolatile memories; photodetectors; FIELD-EFFECT TRANSISTORS; PHASE-TRANSITION; GRAPHENE; PHOTODETECTOR; POLARIZATION; PERFORMANCE; NANOWIRES; PHYSICS; ORIGIN; GATE;
D O I
10.1002/smll.202205347
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ferroelectric (FE) materials, including BiFeO3, P(VDF-TrFE), and CuInP2S6, are a type of dielectric material with a unique, spontaneous electric polarization that can be reversed by applying an external electric field. The combination of FE and low-dimensional materials produces synergies, sparking significant research interest in solar cells, photodetectors (PDs), nonvolatile memory, and so on. The fundamental aspects of FE materials, including the origin of FE polarization, extrinsic FE materials, and FE polarization quantification are first discussed. Next, the state-of-the-art of FE-based optoelectronic devices is focused. How FE materials affect the energy band of channel materials and how device structures influence PD performance are also summarized. Finally, the future directions of this rapidly growing field are discussed.
引用
收藏
页数:24
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共 152 条
  • [71] Lines ME., 1979, PRINCIPLES APPL FERR
  • [72] Stability and passivation of 2D group VA elemental materials: black phosphorus and beyond
    Ling, Zhaoheng
    Li, Peng
    Zhang, Su-Yun
    Arif, Nayab
    Zeng, Yu-Jia
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2022, 34 (22)
  • [73] Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3 Ferroelectric Field-Effect Transistors
    Lipatov, Alexey
    Fursina, Alexandra
    Vo, Timothy H.
    Sharma, Pankaj
    Gruverman, Alexei
    Sinitskii, Alexander
    [J]. ADVANCED ELECTRONIC MATERIALS, 2017, 3 (07):
  • [74] Ferroelectric-Gated InSe Photodetectors with High On/Off Ratios and Photoresponsivity
    Liu, Li
    Wu, Liangmei
    Wang, Aiwei
    Liu, Hongtao
    Ma, Ruisong
    Wu, Kang
    Chen, Jiancui
    Zhou, Zhang
    Tian, Yuan
    Yang, Haitao
    Shen, Chengmin
    Bao, Lihong
    Qin, Zhihui
    Pantelides, Sokrates T.
    Gao, Hong-Jun
    [J]. NANO LETTERS, 2020, 20 (09) : 6666 - 6673
  • [75] Liu X., 2019, ANGEW CHEM, V131, P14646, DOI [10.1002/ange.201907660, DOI 10.1002/ANGE.201907660]
  • [76] Flexible electronics based on inorganic nanowires
    Liu, Zhe
    Xu, Jing
    Chen, Di
    Shen, Guozhen
    [J]. CHEMICAL SOCIETY REVIEWS, 2015, 44 (01) : 161 - 192
  • [77] Progress, Challenges, and Opportunities for 2D Material Based Photodetectors
    Long, Mingsheng
    Wang, Peng
    Fang, Hehai
    Hu, Weida
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2019, 29 (19)
  • [78] Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing
    Luo, Zheng-Dong
    Zhang, Siqing
    Liu, Yan
    Zhang, Dawei
    Gan, Xuetao
    Seidel, Jan
    Liu, Yang
    Han, Genquan
    Alexe, Marin
    Hao, Yue
    [J]. ACS NANO, 2022, 16 (02) : 3362 - 3372
  • [79] Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors
    Luo, Zheng-Dong
    Xia, Xue
    Yang, Ming-Min
    Wilson, Neil R.
    Gruverman, Alexei
    Alexe, Marin
    [J]. ACS NANO, 2020, 14 (01) : 746 - 754
  • [80] Design and Prominent Dielectric Properties of a Layered Phase-Transition Crystal: (Cyclohexylmethylammonium)2CdCl4
    Lv, Xing-Hui
    Liao, Wei-Qiang
    Wang, Zhong-Xia
    Li, Peng-Fei
    Mao, Chen-Yu
    Ye, Heng-Yun
    [J]. CRYSTAL GROWTH & DESIGN, 2016, 16 (07) : 3912 - 3916