Recent Advances in Ferroelectric-Enhanced Low-Dimensional Optoelectronic Devices

被引：23

作者：

Iqbal, Muhammad Ahsan ^{[1
]}

Xie, Haowei ^{[1
]}

Qi, Lu ^{[2
]}

Jiang, Wei-Chao ^{[1
]}

Zeng, Yu-Jia ^{[1
]}

机构：

[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Shenzhen 518060, Peoples R China

[2] Shenzhen Technol Univ, Key Lab Adv Opt Precis Mfg Technol, Guangdong Higher Educ Inst, Shenzhen 518118, Peoples R China

来源：

SMALL | 2023年 / 19卷 / 16期

基金：

中国国家自然科学基金;

关键词：

ferroelectric materials; low-dimensional materials; nonvolatile memories; photodetectors; FIELD-EFFECT TRANSISTORS; PHASE-TRANSITION; GRAPHENE; PHOTODETECTOR; POLARIZATION; PERFORMANCE; NANOWIRES; PHYSICS; ORIGIN; GATE;

D O I：

10.1002/smll.202205347

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ferroelectric (FE) materials, including BiFeO3, P(VDF-TrFE), and CuInP2S6, are a type of dielectric material with a unique, spontaneous electric polarization that can be reversed by applying an external electric field. The combination of FE and low-dimensional materials produces synergies, sparking significant research interest in solar cells, photodetectors (PDs), nonvolatile memory, and so on. The fundamental aspects of FE materials, including the origin of FE polarization, extrinsic FE materials, and FE polarization quantification are first discussed. Next, the state-of-the-art of FE-based optoelectronic devices is focused. How FE materials affect the energy band of channel materials and how device structures influence PD performance are also summarized. Finally, the future directions of this rapidly growing field are discussed.

引用

页数：24

共 152 条

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