All-green Cs4CuSb2Cl12 perovskite films deposited in situ by AACVD and their doping with F- ions for photodetectors and memdiodes

被引:5
作者
Balderas-Aguilar, Jesus Uriel [1 ]
Falcony-Guajardo, Ciro [2 ]
Garduno-Wilches, Ismael Arturo [3 ]
Aguilar-Frutis, Miguel angel [4 ]
Hernandez-Como, Norberto [5 ]
Martinez-Merlin, Ivan Enrique [6 ]
Garcia-Hipolito, Manuel [1 ]
Alonso-Huitron, Juan Carlos [1 ]
机构
[1] Univ Nacl Autonoma Mexico, Inst Invest Mat, Ciudad Univ, AP 70 360, Mexico City 04510, Mexico
[2] Ctr Invest & Estudios Avanzados IPN CINVESTAV, Dept Fis, Ave Inst Politecn Nacl 2508, San Pedro Zacatenco G, Mexico City 07360, Mexico
[3] CONAHCyT Inst Politecn Nacl, Ctr Invest Ciencia Aplicada & Tecnol Avanzada, Calzada Legaria 694,Col Irrigac,Alcaldia Miguel Hi, Mexico City 11500, DF, Mexico
[4] Inst Politecn Nacl, Ctr Invest Ciencia Aplicada & Tecnol Avanzada, Calzada Legaria 694, Col Irrigac,Alcaldia Miguel H, Mexico City 11500, DF, Mexico
[5] Inst Politecn Nacl, Ctr Nanociencias & Micro & Nanotecnol, Unidad Profes Adolfo Lopez Mateos, Av Luis Enr Erro S N,Zacatenco,Alcaldia Gustavo A, Mexico City 07738, Mexico
[6] Tecnol Nacl Mexico Inst Tecnol Tlalnepantla DEPI, Inst Tecnol Tlalnepantla, Av Inst Tecnol S N Col Comun,La Comunidad, Tlalnepantla De Baz 54070, Mexico
关键词
Cesium compounds - Chemical vapor deposition - Chlorine compounds - Fluorine compounds - Lead compounds - Metal halides - Perovskite - Semiconductor doping;
D O I
10.1039/d3tc03006g
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
With the accelerated development of new lead-free metal halide perovskites, whose chemical and physical properties are very different from their so-studied classical Pb-containing counterparts, finding suitable synthetic methodologies for these emerging materials seems to be the new challenge. Cs4CuSb2Cl12 is a vacancy-ordered layered double perovskite promising for a large variety of optoelectronic applications. Here, the synthesis in situ of Cs4CuSb2Cl12 and Cs4CuSb2Cl12:F- films by aerosol-assisted chemical vapor deposition (AACVD) is reported for the first time. A double source AACVD was used, and the precursor salts were separated in two different precursor solutions that were simultaneously deposited, avoiding its crystallization before film formation. The methodology was then used to fabricate photoconductor devices that showed morphological, photoresponse, memory window tunability, electronic plasticity, and conductivity features that can be tuned by F- doping, demonstrating the versatility of the AACVD method for the deposition of emergent perovskite structures as films for device integration.
引用
收藏
页码:16214 / 16224
页数:11
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