Wurtzite and fluorite ferroelectric materials for electronic memory

被引:106
作者
Kim, Kwan-Ho [1 ]
Karpov, Ilya [2 ]
Olsson, Roy H. H. [1 ]
Jariwala, Deep [1 ]
机构
[1] Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USA
[2] Intel Corp, Components Res, Hillsboro, OR USA
关键词
CONTENT-ADDRESSABLE MEMORY; MONOLITHICALLY INTEGRATED RRAM; FIELD-EFFECT TRANSISTORS; IN-MEMORY; TUNNEL-JUNCTION; THIN-FILMS; DIELECTRIC-CONSTANT; HYSTERESIS LOOP; CROSSBAR ARRAY; THICKNESS;
D O I
10.1038/s41565-023-01361-y
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ferroelectric materials, the charge equivalent of magnets, have been the subject of continued research interest since their discovery more than 100 years ago. The spontaneous electric polarization in these crystals, which is non-volatile and programmable, is appealing for a range of information technologies. However, while magnets have found their way into various types of modern information technology hardware, applications of ferroelectric materials that use their ferroelectric properties are still limited. Recent advances in ferroelectric materials with wurtzite and fluorite structure have renewed enthusiasm and offered new opportunities for their deployment in commercial-scale devices in microelectronics hardware. This Review focuses on the most recent and emerging wurtzite-structured ferroelectric materials and emphasizes their applications in memory and storage-based microelectronic hardware. Relevant comparisons with existing fluorite-structured ferroelectric materials are made and a detailed outlook on ferroelectric materials and devices applications is provided. This Review presents the most recent ferroelectric materials with wurtzite structure and emphasizes applications in memory and storage-based microelectronic hardware.
引用
收藏
页码:422 / 441
页数:20
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