Device engineering of p-CuAlO2/0-Ga2O3 interface: A staggered-gap band-alignment

被引:17
作者
Prasad, Chowdam Venkata [1 ,2 ,3 ]
Labed, Madani [1 ,2 ,3 ]
Shaikh, Mohammad Tauquir Alam Shamim [1 ,2 ,3 ]
Min, Ji Young [1 ,2 ,3 ]
Nguyen, Tan Hoang Vu [1 ,2 ,3 ]
Song, Wonjin [1 ,2 ,3 ]
Park, Jang Hyeok [1 ,2 ,3 ]
Kim, Kyong Jae [1 ,2 ,3 ]
Kim, Sangmo [1 ,2 ,3 ]
Kyoung, Sinsu [4 ]
Sengouga, Nouredine [5 ]
Rim, You Seung [1 ,2 ,3 ]
机构
[1] Sejong Univ, Dept Intelligent Mechatron Engn & Convergence Engn, Seoul 05006, South Korea
[2] Sejong Univ, Dept Semicond Syst Engn, Seoul 05006, South Korea
[3] Sejong Univ, Inst Semicond & Syst IC, Seoul 05006, South Korea
[4] PowerCubeSemi Inc, Res & Dev, 686 Cheonggyesan Ro, Seongnam Si 13105, Gyeonggi Do, South Korea
[5] Univ Biskra, Lab Semiconducting & Met Mat LMSM, Biskra 07000, Algeria
关键词
p-CuAlO2; Heterojunction; On-resistance; Breakdown voltage; BETA-GA2O3; SINGLE-CRYSTALS; THIN-FILMS; HETEROJUNCTION DIODES; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; HIGH-MOBILITY; CUALO2; TRANSPORT; SILICON; VOLTAGE;
D O I
10.1016/j.mtadv.2023.100402
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, by controlling the oxygen flow rate (OFR) (from 0% to 30%), we suggest using a p-type copper aluminum oxide (p-CuAlO2) interlayer to enhance the high breakdown and low leakage current for 0-Ga2O3-based power device applications. Results of AFM measurements on p-CuAlO2 films per-formed using various OFRs demonstrate that greater OFRs result in an increase in film roughness payable to the unavoidable leading of defects/oxygen vacancy (VO). We used XPS and TEM analysis to validate the surface elemental compositions, chemical states, band offsets and microstructural properties of p-CuAlO2/0-Ga2O3 heterojunction (HJ) with different OFRs. With increasing OFR from 0% to 17.6%, the VBO and CBO values of HJ were decreased from 1.73 eV to 1.23 eV and from 0.53 eV to 0.38 eV respectively. Then, with increasing OFR from 17.6% to 30%, VBO was decreased from 1.23 eV to 1.13 eV while CBO increased from 0.38 eV to 0.58 eV. The staggered-gap (type-II) across the p-CuAlO2/0-Ga2O3 HJ is identified the entire OFRs. The rising tendency of optical bandgap (Eg) of p-CuAlO2 with range of OFRs, a maximum Eg of 4.35 eV was obtained with OFR of 30%. Furthermore, the electrical and carrier transport properties of p-CuAlO2/0-Ga2O3 HJ were studied using I-V and C-V techniques. The reverse breakdown voltage (Vbr) of HJ is strongly dependent on OFRs. With increasing OFRs, Vbr was decreased from 937 V to 924 V, and then to 1000 V with increasing OFR from 0% to 17.6% and then to 30%. In addition, a decrease in the interface state density (NSS) with increasing OFRs was observed which indicates that oxygen may be an effective surface passivation. Analysis confirmed that Poole-Frenkel emission dominates the reverse leakage current of all the HJ samples. The type-II p-CuAlO2/0-Ga2O3 HJ may facilitate the design and manufacture of high-performance 0-Ga2O3-based heterojunctions and advance optoelectronic devices. & COPY; 2023 Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http:// creativecommons.org/licenses/by-nc-nd/4.0/).
引用
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页数:16
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